Poisoning Mechanism Map for Metal Hydride Hydrogen Storage Materials
Jiapeng Bi,Panpan Zhou,Wei Jiang,Huaqin Kou,Tao Tang,Yajie Zhang,Yang Liu,Qianwen Zhou,Yunxi Yao,Yuan Zhang,Mao Yang,Lixin Chen,Xuezhang Xiao
DOI: https://doi.org/10.1002/advs.202408522
IF: 15.1
2024-09-22
Advanced Science
Abstract:The poisoning mechanisms of impurity gases on hydrogen storage materials are classified into two basic categories. During hydrogenation, inactive gases cause a minimal blanket effect by physically obstructing H2 diffusion in H2‐impurity mixed gas, while active gases significantly poison materials by chemically limiting H2 absoprtion at interface. This understanding informs targeted strategies for comprehensive anti‐poisoning optimizations. The effective utilization of hydrogen storage materials (HSMs) is hindered by impurity gas poisoning, posing a significant challenge for large‐scale applications. This study elucidates the poisoning mechanisms of various impurities gases (CO, CO2, O2, Ar, He, CH4, N2) on ZrCo, Pd, U and LaNi5. Impurities gases are categorized into active and inactive types based on their effecting behaviors and mechanisms on the hydrogenation of HSMs. During the hydrogenation process, active impurities chemically poison the hydrogenation reaction by limiting hydrogen absorption at interface, while inactive impurities physically hinder hydrogenation reaction by impeding hydrogen diffusion in hydrogen‐impurity mixed gas. In situ Scanning Tunneling Microscope clarifies these behaviors, and a novel criterion based on hydrogen spontaneous dissociation energy is introduced to explain and predict impurity–substrate interaction characteristics. The novel findings of this work provide a comprehensive framework for designing long‐lived HSMs with poisoning resistance, guiding the development of more resilient hydrogen storage systems.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry