Helium Ion‐Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High‐Quality Nanofabrication (Small Methods 5/2024)

Xiaolei Wen,Lansheng Zhang,Xiuxia Wang,Lin Chen,Jian Sun,Huan Hu
DOI: https://doi.org/10.1002/smtd.202470022
IF: 12.4
2024-05-18
Small Methods
Abstract:Front Cover In article number 2301364, Wen, Hu, and co‐workers report a methodology named helium ion‐bombardment‐enhanced etching for high‐quality silicon carbide nanodevice fabrication. 30 keV helium ions was employed to break Si‐C bonds and create dangling bonds which allow high‐quality wet etching of SiC via a mixture of hydrofluoric acid and hydrogen peroxide. Etched SiC surface owns a low roughness of 0.9 nm crucial for optical applications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
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