Abstract:This work presents an excellent metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. Forty‐four percentage of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. The MOSFETs with excellent performance are fabricated by combining an H‐terminated channel and an epitaxially grown boron‐doped layer as the source/drain contacts of the diamond devices. According to the electrical statistical results of ≈110 devices on the polycrystalline diamond substrate, 44% of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. The normally‐off characteristics are more related to the higher amounts of nitrogen concentration than the grain boundaries. The stable boron‐doped source and drain provide a high concentration of holes, which facilitate transport in the surface p‐type channel induced by the H‐termination. The characteristics of the MOSFETs are inspiring for the fabrication of complementary inverter circuits on large diamond wafers.

Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

High Temperature (300 °C) ALD Grown Al2O3 on Hydrogen Terminated Diamond: Band Offset and Electrical Properties of the MOSFETs

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric

Performance of hydrogen-terminated diamond MOSFET with LaB<sub>6</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm

H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

Improved Performance of H-Diamond Mosfets with Zro2/Al2o3 Gate Dielectric Stacks Deposited by Electron Beam Method

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

MOSFETs on (110) C–H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Recent progress in diamond-based MOSFETs

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

Oxidized-silicon-terminated Diamond p-FETs with SiO 2 -fiNing Shallow Trench Isolation Structures

Over 1 A Operation of Vertical-Type Diamond MOSFETs

Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

MOSFETs on (110) C-H Diamond: ALD Al<sub>2</sub>O<sub>3</sub>/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors