Abstract:With the development of complementary metal-oxide semiconductor (CMOS) technology, the feature size of mental-oxide-semiconductor field-effect-transistor (MOSFET) is continuously shrunk, the short channel effect becomes more and more serious, which makes the static power consumption increase, and now the static power consumption becomes a main source of the power consumption of the integrated circuits. Currently, the performance of CMOS binary logic processor is approaching a bottleneck; therefore the ternary logic becomes a research hotspot to promote the development of high-performance low-power integrated circuits. Compared with binary logic, ternary logic possesses a strong data expression capability, which can not only improve the data density, but also reduce the circuit power consumption and the system complexity. However, using binary devices to build ternary logic circuits requires a large number of components, and even the passive components, which makes it impossible to leverage the advantages of ternary logic. The other method of implementing ternary logic is to utilize innovative two-dimensional materials. This method requires a small number of components and obviates the need for passive components, but it faces the problem that the fabrication process is not mature and cannot be mass-produced. To solve these problems, in this paper by combining the tunneling and the drift diffusion mechanism, we propose a tunneling metal-oxide-semiconductor field-effect transistor (TMOSFET) with three-state characteristics that make it highly suitable for ternary logic design. Compared with other ternary logic schemes, the ternary inverter based on TMOSFET has the same circuit structure as binary inverter, which can simplify the circuit design. In this paper, the operational mechanism of this ternary inverter is studied, and the condition of three-state output of inverter is analyzed. It is found that when the operating voltage VDD and the device turning voltage Vturn satisfy VDD/Vturn approximate to 1.4, the input voltage ranges of the three output states are equivalent. In addition, the influence of TMOSFET transfer characteristic on this ternary inverter is also analyzed. This has certain reference significance for designing and studying ternary logic circuits in future.

A Comparative Study on ReLU Implementation Using TMDFETs

Power efficient ReLU design for neuromorphic computing using spin Hall effect

SHE-MTJ based ReLU-max pooling functions for on-chip training of neural networks

Performance Analysis and Design Comparison of Junctionless TFET: a Review Study

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

A Novel TMOSFET Ternary Inverter Based on Hybrid Conduction Mechanism

Implementation of a Boolean function with a double-gate vertical TFET (DGVTFET) using numerical simulations

Evaluation of Ultra-Low Power Tunneling Field Effect Transistor Power Management Unit

Transition metal dichalcogenide FET‐based dynamic random‐access memory

A CMOS Rectified Linear Unit Operating in Weak Inversion for Memristive Neuromorphic Circuits

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Design of tunnel FET architectures for low power application using improved Chimp optimizer algorithm

Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures

Design and Performance Investigation of Tunnel-FET based energy efficient Approximate and Accurate adders targeted towards low power IoT nodes

Evaluation of Analog Performance of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) MOSFETs

Hysteresis Activation Function for Efficient Inference

Benchmarking Tfet From A Circuit Level Perspective: Applications And Guideline

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

Practical Implementation of Memristor-Based Threshold Logic Gates

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance