Abstract:Conventional field-effect transistors (FETs) have long been considered a fundamental electronic component for a diverse range of devices. However, nanoelectronic circuits based on FETs are not energy efficient because they require a large supply voltage for switching applications. To reduce the supply voltage in standard FETs, which is hampered by the 60 mV/decade limit established by the subthreshold swing (SS), a new class of FETs have been designed, tunnel FETs (TFETs). A TFET utilizes charge-carrier transportation in device channels using quantum mechanical based band-to-band tunneling despite of conventional thermal injection. The TFETs fabricated with thin semiconducting film or nanowires can attain a 100-fold power drop compared to complementary metal-oxide-semiconductor (CMOS) transistors. As a result, the use of TFETs and CMOS technology together could ameliorate integrated circuits for low-power devices. The discovery of two-dimensional (2D) materials with a diverse range of electronic properties has also opened new gateways for condensed matter physics, nanotechnology, and material science, thus potentially improving TFET-based devices in terms of device design and performance. In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices. Lastly, future prospects are presented for the improvement of device design and the working efficiency of TFETs.

Evaluation of Ultra-Low Power Tunneling Field Effect Transistor Power Management Unit

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

Ultra Low Power Circuits Design Based on III-V Group Heterojunction Tunnel Field Effect Transistor

Tunneling towards efficiency: A survey of design and optimization strategies for tunnel FETs in ultra-low power applications

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Benchmarking of multi-finger Schottky-Barrier tunnel FET for ultra-low power applications

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

A Sub-100nA Ultra-low Leakage MCU Embedding Always-on Domain Hybrid Tunnel FET-CMOS on 300mm Foundry Platform

Benchmarking Tfet From A Circuit Level Perspective: Applications And Guideline

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

First Foundry Platform Of Complementary Tunnel-Fets In Cmos Baseline Technology For Ultralow-Power Iot Applications: Manufacturability, Variability And Technology Roadmap

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

Complementary tunneling transistor for low power application

Towards ultralow-power and high-speed electronics: Tunnel transistor based on single-chain Tellurium

Security Analysis of Tunnel Field-Effect Transistor for Low Power Hardware

New steep-slope device of comprehensive properties enhancement with hybrid operation mechanism for ultra-low-power applications

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Gate Oxide and Implantation Process Co-Optimization for Low-Power MCU Applications