Kinetics‐Driven Dual Hydrogen Spillover Effects for Ultrasensitive Hydrogen Sensing

Haijie Cai,Na Luo,Xiaowu Wang,Mengmeng Guo,Xiaojie Li,Bo Lu,Zhenggang Xue,Jiaqiang Xu
DOI: https://doi.org/10.1002/smll.202302652
IF: 13.3
2023-06-27
Small
Abstract:Palladium (Pd)-modified metal oxide semiconductors (MOSs) gas sensors often exhibit unexpected hydrogen (H<sub>2</sub> ) sensing activity through a spillover effect. However, sluggish kinetics over a limited Pd-MOS surface seriously restrict the sensing process. Here, a hollow Pd-NiO/SnO<sub>2</sub> buffered nanocavity is engineered to kinetically drive the H<sub>2</sub> spillover over dual yolk-shell surface for the ultrasensitive H<sub>2</sub> sensing. This unique nanocavity is found and can induce more H<sub>2</sub> absorption and markedly improve kinetical H<sub>2</sub> ab/desorption rates. Meanwhile, the limited buffer-room allows the H<sub>2</sub> molecules to adequately spillover in the inside-layer surface and thus realize dual H<sub>2</sub> spillover effect. Ex situ XPS, in situ Raman, and density functional theory (DFT) analysis further confirm that the Pd species can effectively combine H<sub>2</sub> to form Pd-H bonds and then dissociate the hydrogen species to NiO/SnO<sub>2</sub> surface. The final Pd-NiO/SnO<sub>2</sub> sensors exhibit an ultrasensitive response (0.1-1000 ppm H<sub>2</sub> ) and low actual detection limit (100 ppb) at the operating temperature of 230 °C, which surpass that of most reported H<sub>2</sub> sensors.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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