A Simulation Study for Enhancing the Performance of Luminescent Organic Transistor Using Reduced Voltage and Hole Blocking Layer

Vijay Kumar,Charu Madhu
DOI: https://doi.org/10.1088/1402-4896/ad84bf
2024-10-11
Physica Scripta
Abstract:Eco-friendly and biodegradable technology forms the basis of organic electronics. A luminescent organic transistor (LOT) is a device created using this technology, which is capable of emission of light and acting as switch functions in a single unit. This research seeks to develop and model a nonplanar contact heterostructure-based LOT by employing the defect density of states (DOS) to accurately simulate the amorphous nature of organic semiconductors. This study evaluates two high-k dielectric materials, hafnium oxide (HfO2) and poly(vinylidene fluoride-trifluoroethylene)P(VDF-TrFe), to achieve low-voltage operation at (-10V). Furthermore, this study investigated the influence of a hole blocking material, 1,3,5-Tris(3-pyridyl-3-phenyl)benzene(TmPyPB), on device performance. Simulations revealed p-channel transistor characteristics with a maximum source-drain current of (-1.6 mA) and an on-off current ratio exceeding 104 for HfO2, compared to (-0.75 mA) and approximately 104 for P(VDF-TrFe). The model also demonstrated exceptional electrical properties, including a peak hole mobility of (1.96 cm2 v-1 s-1), a threshold voltage of (-0.85 V), and a sub-threshold voltage of 492 mV/dec in saturation. The recombination zone exhibited an electron concentration of 18.0 cm-3, a hole concentration of 19.3 cm-3, and a Langevin recombination rate of 24.7 cm-3s-1 near the drain electrode. This model serves as an ideal platform for testing newly developed molecules to enhance the performance of luminescent transistor.
physics, multidisciplinary
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