Abstract:Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO) at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

Low Voltage Organic Thin-Film Transistor with Reduced Sub-Gap Dos for Power Efficient Logic Circuits

Numerical Simulation and Analysis of the Switching Performance for Printable Low-Voltage Organic Thin-Film Transistors in Active-Matrix Backplanes

Highly Efficient All‐Solution‐Processed Low‐Voltage Organic Transistor with a Micrometer‐Thick Low‐k Polymer Gate Dielectric Layer

Low-Voltage Organic Thin-Film Transistors Based on Solution-Processed Hybrid Dielectrics: Theoretical and Experimental Studies

Towards Low-Voltage Organic Thin Film Transistors (otfts) with Solution-Processed High-K Dielectric and Interface Engineering

Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

Low-voltage-operation of Flexible Organic C8-BTBT Thin-Film Transistors with a Reactively Sputtered AlOx Gate Dielectric

High-k Polymer Materials Containing Cyclic Carbonate As Gate Dielectrics for Application in Low-Voltage Operating Organic Thin-Film Transistors

High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors with Low- $k$ /High- $k$ Bilayer Gate Dielectric

Threshold voltage tuning of low-voltage organic thin-film transistors

Reducing the power consumption of two-dimensional logic transistors

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Low‐voltage Polymer‐dielectric‐based Organic Field‐effect Transistors and Applications

Dual-gate CuPc Organic Thin Film Transistors

Bottom-Contact Organic Field-Effect Transistors Having Low-Dielectric Layer Under Source And Drain Electrodes

High-performance Organic Thin-film Transistors: Principles and Strategies

Low-Voltage Organic Field-Effect Transistors: Challenges, Progress, and Prospects

Solution Processed High Performance Short Channel Organic Thin-Film Transistors with Excellent Uniformity and Ultra-low Contact Resistance for Logic and Display

Fully Solution Processed Bottom-Gate Organic Field-Effect Transistor with Steep Subthreshold Swing Approaching the Theoretical Limit

Dual- $v_{\rm Th}$ Low-Voltage Solution Processed Organic Thin-Film Transistors with a Thick Polymer Dielectric Layer

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors