Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

A short note on the SIMS characterisation of ZnO/Si(100) interface

Characterization of Cubic Phase MgZnO/Si(1 0 0) Interfaces

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

The impact of Si substrates on the properties of ZnO film

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Characterization of ultrathin SiO2/Si interface grown by low temperature plasma oxidation

Fabrication and Characteristics of ZnO Thin Films with an Al/Si (100) Substrates

Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

A potentially optimal interface of ZnO/Si predicted by the good-matching-site approach

Dual‐functional Crystalline BeO Layer in Enhancement‐mode ZnO/Si Thin Film Transistors

Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Low-Temperature Interface Engineering For High-Quality Zno Epitaxy On Si(111) Substrate

Growth and Characterization of ZnO Thin Film Prepared by Molecular-Beam Epitaxy on Si(100)

Structural Characteristics of ZnO Epilayer Grown on Si Substrates

Surface‐interface investigations of an ultrathin pulsed laser deposited NiO/ZnO bilayer structure

Interface Control for Epitaxial Growth of High-quality Zn0(0001Film on Si(111)Substrate