Abstract:Carbon-based inorganic CsPbX3 (X = I, Br, Cl) perovskite solar cells (PSCs) are attracting great attention in the photovoltaic field because of their low cost, simple process, and superior thermal stability. However, the large difference in energy band between the CsPbX3 and carbon electrode leads to the poor hole extraction and unfavorable charge recombination, thus deteriorating device's efficiency. In this work, a solution-processed dopant-free tin phthalocyanine (SnPc) film is used as a hole-transport layer (HTL) to fabricate carbon-based CsPbI2Br PSCs by a low-temperature process. At the optimal process, the device achieves a maximum efficiency of 11.39% with less hysteresis, which is much higher than 9.22% of reference device without the SnPc HTL. Moreover, the unencapsulated device exhibits the improved stability and remains about 90% of its initial efficiency after 30 days in ambient air (20–25 °C) with 25–35% relative humidity (RH). This finding reveals that the solution-processed dopant-free SnPc HTL can significantly promote charge transport and suppress charge recombination at the CsPbI2Br/carbon interface. This work provides a low-temperature and solution-processed method to fabricate the efficient and stable carbon-based inorganic PSCs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01184?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01184</a>.Photovoltaic parameters corresponding to Table S1, Table S4, Figure S3, and Figure S9; quantified atomic ratio for the SnPc-film as obtained from EDS measurement; a summary of annealing temperature, Voc, and PCE values measured under RS direction for carbon-based CsPbI2Br PSCs reported in recent years; the values of Jph*, Jph#, Jsat, Jph*/Jsat, Jph#/Jsat, and Gmax; fitting parameters of TRPL decay spectra; fitting values of different electronic parameters obtained from the Nyquist plots; XRD patterns and photo images of PbI2, PbI2(DMSO), PbBr2, and PbBr2(DMSO) powders; thickness of SnPc HTL measured by an ellipsometer; J–V curves of SnPc-PSCs with different SnPc solution concentrations; EDS spectra of the SnPc-film; XRD patterns of SnPc powder and SnPc film annealed at 120 °C; the schematic of energy level diagram; the steady-state current density as a function of time measured at the maximum power output point; spectrum for the thickness of CsPbI2Br layer; two possible growth models while depositing solution-processed dopant-free SnPc on the CsPbI2Br surface; KPFM images and CPD values of SnPc films based on different SnPc solution concentrations (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01184/suppl_file/ae0c01184_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Reduced E loss of Planar-Structured Carbon Counter Electrode-Based CsPbI 3 Solar Cells with Tetrabutylammonium Halide-Modified SnO 2

All-inorganic, Hole-Transporting-layer-free, Carbon-Based CsPbIBr2 Planar Solar Cells with ZnO As Electron-Transporting Materials

A Facile Interface Engineering Method to Improve the Performance of FTO/ZnO/CsPbI 3− X Br X ( X < 1)/C Solar Cells

All-Inorganic Perovskite Solar Cells with Tetrabutylammonium Acetate as the Buffer Layer between the SnO 2 Electron Transport Film and CsPbI 3

Mitigating interfacial and bulk defects via chlorine modulation for HTL-free all-inorganic CsPbI2Br carbon-based perovskite solar cells with efficiency over 14%

High‐Efficiency Carbon‐based CsPbI2Br Perovskite Solar Cells from Dual Direction Thermal Diffusion Treatment with Cadmium Halides

A Solution-Processed Dopant-Free Tin Phthalocyanine (snpc) Hole Transport Layer for Efficient and Stable Carbon-Based CsPbI2Br Planar Perovskite Solar Cells Prepared by a Low-Temperature Process

Significant efficiency enhancement of carbon-based CsPbI2Br perovskite solar cells enabled by optimizing tin oxide electron transport layer

A Solution-Processed Dopant-Free Tin Phthalocyanine (SnPc) Hole Transport Layer for Efficient and Stable Carbon-Based CsPbI 2 Br Planar Perovskite Solar Cells Prepared by a Low-Temperature Process

Dimensionality Control of SnO2 Films for Hysteresis-Free, All-Inorganic CsPbBr3 Perovskite Solar Cells with Efficiency Exceeding 10

Highly‐Stable CsPbI 3 Perovskite Solar Cells with an Efficiency of 21.11% via Fluorinated 4‐Amino‐Benzoate Cesium Bifacial Passivation

Surface Passivation of CsPbI 3 Films for Efficient and Stable Hole-Transporting Layer-Free Carbon-Based Perovskite Solar Cells

Achieving 17.46% Efficiency CsPbI2Br Perovskite Solar Cells via Multifunction Lead Chloride‐Modified ZnO Electron Transporting Layer

Managing Interfacial Defects and Charge-Carriers Dynamics by a Cesium-Doped SnO2 for Air Stable Perovskite Solar Cells

CsPbI3 Based All‐Inorganic Perovskite Solar Cells: Further Performance Enhancement of the Electron Transport Layer‐Free Structure from Device Simulation

Strengthened Buried Interface via Metal Sulfide Passivation towards High‐Performance CsPbBr3 Perovskite Solar Cells

Improved eco-friendly CsSn0.5Ge0.5I3 perovskite photovoltaic efficiency beyond 20% with SMe-TATPyr hole-transporting layer

Fully Inorganic CsSnI 3 -Based Solar Cells with >6% Efficiency and Enhanced Stability Enabled by Mixed Electron Transport Layer

Bifunctional Passivation for Efficient and Stable Low-Temperature Processed All-Inorganic CsPbIBr2 Perovskite Solar Cells

Strengthened Buried Interface Via Metal Sulfide Passivation Toward High‐Performance CsPbBr3 Perovskite Solar Cells

Amorphous BaTiO3 Electron Transport Layer for Thermal Equilibrium‐Governed γ‐CsPbI3 Perovskite Solar Cell with High Power Conversion Efficiency of 19.96%