Full-Area i-a-Si:H/ATO/Mg Electron-Selective Contacts for Silicon Solar Cells
Xiaoning Liu,Zhiyuan Xu,Yu Yan,Yaya Song,Qian Huang,Huizhi Ren,Xiaodan Zhang,Ying Zhao,Guofu Hou
DOI: https://doi.org/10.1021/acsaem.3c01399
IF: 6.4
2023-09-06
ACS Applied Energy Materials
Abstract:TiOX has attracted tremendous research interest as an electron-selective contact (ESCs) in crystalline silicon (c-Si) solar cells due to its reasonable passivating quality and suitable energy band. Al-doped TiOX (ATO) processes more oxygen vacancies, consequently promoting its contact performance. Besides, the work function (WF) can be further optimized after inserting a thin Mg layer, resulting in outstanding contact resistivity (ρc). In this contribution, we proposed hydrogenated intrinsic amorphous silicon (i-a-Si:H)/ATO/Mg for n-type c-Si solar cells as ESC with excellent ρc of 6 mΩcm2 and minority carrier lifetime (τ) of 1.5 ms, and yielded an efficiency of 18.2%. Afterward, a complete loss analysis of the champion cell was carried out using Quokka 2 simulation software to define the dominant loss mechanisms. This paradigm introduces a promising approach for replacing widely used heterocontacts in efficient c-Si solar cells.
materials science, multidisciplinary,chemistry, physical,energy & fuels