S-filled and Te-doped CoSb3 materials prepared by HPHT method with ultra-low thermal conductivity

Z. L. Guo,X. Han,L. Deng
DOI: https://doi.org/10.1142/s0217984924503032
2024-03-19
Modern Physics Letters B
Abstract:Modern Physics Letters B, Ahead of Print. In this paper, a series of S[math]Co4Sb[math]Te[math] samples were prepared by high pressure and high temperature (HPHT) method under different pressures. The synthesis time was shortened from several days to 0.5 h. Te doping and S filling simultaneously optimized the thermal and electrical transport properties of the CoSb3 materials. We found a porous architecture containing rich grain boundaries, different grain sizes, nano- to micrometer-sized pores, and a large number of dislocations, which can scatter a wide spectrum of phonons. Seebeck coefficient [math], electrical resistivity [math], and thermal conductivity [math] were measured between 295 K and 773 K. The minimum thermal conductivity of S[math]Co4Sb[math]Te[math] synthesized at 3.0 GPa was 1.23 Wm[math] K[math], and its maximum zT value reached 1.07 at 773 K, especially the lattice thermal conductivity was as low as 0.49 Wm[math] K[math].
physics, condensed matter, applied, mathematical
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