Abstract:Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga2O3 based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench synthesis protocol for hydrogen assisted Mg doping in beta-Ga2O3, taking into account the gas phase equilibrium between H2, O2 and H2O, which determines the H chemical potential. We predict Ga2O3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to the Mg acceptor activation by H removal in GaN. For equilibrium annealing there is an optimal temperature that maximizes the Ga2O3 net acceptor density for a given Mg doping level, which is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga2O3 Fermi level drops below mid-gap down to about +1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral MgGa0 acceptors. The Fermi level reduction down to +1.5 eV and suppression of free electron density in this doping type converted (NA > ND) Ga2O3 material is of significance and impact for the design of Ga2O3 power electronics devices.

An Introduction to the Worldline Technique for Quantum Field Theory Calculations

Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping

Possible Efficient P-Type Doping of Aln Using Be: an Ab Initio Study

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Diffusion of Be in gallium nitride: Experiment and modelling

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

P-Type Gan Growth from A Single Gan Precursor Via Molecular Beam Epitaxy and Dopant Activation

Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN Via Mg Co-doped with 4D-Element (In)

A Comparative Study on Be and Mg Doping in GaN Films Grown Using a Single GaN Precursor Via Molecular Beam Epitaxy

Study of the heavily p-type doping of cubic GaN with Mg

P-doping with beryllium of long-wavelength InAsSb

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Realization of P-Type Gallium Nitride by Magnesium Ion Implantation for Vertical Power Devices

Achieving High Conductivity P-Type Ga2O3 Through Al-N and In-N Co-Doping

P-type Ionization Level Lowering in Ultrawide Bandgap Al1-xGaxN [1120] Digital Alloys

A First Principles Study of P-Type Doping in Two Dimensional GaN.

Electrical properties of highly-doped MBE-grown gallium phosphide nanowires

Boron doping in gallium oxide from first principles

Dopant-Dopant Interactions in Beryllium doped Indium Gallium Arsenide: an Ab Initio Study

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires