Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

Avinash Patsha,S. Amirthapandian,Ramanathaswamy Pandian,S. Bera,Anirban Bhattacharya,Sandip Dhara

DOI: https://doi.org/10.1021/jp507216d

2015-08-31

Abstract:Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and its pathways in nanowires for such devices is limited by the growth methods. We report the direct evidence of incorporation pathway for Mg dopants in p-type nonpolar GaN nanowires grown via vapour-liquid-solid (VLS) method in a chemical vapour deposition technique for the first time. Mg incorporation is confirmed using X-ray photoelectron (XPS) and electron energy loss spectroscopic (EELS) measurements. Energy filtered transmission electron microscopic (EFTEM) studies are used for finding the Mg incorporation pathway in the GaN nanowire. Photoluminescence studies on Mg doped GaN nanowires along with the electrical characterization on heterojunction formed between nanowires and n-Si confirm the activation of Mg atoms as p-type dopants in nonpolar GaN nanowires.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to understand and confirm the incorporation path of magnesium (Mg) dopants in non - polar gallium nitride (GaN) nanowires, especially in p - type non - polar GaN nanowires prepared by the vapor - liquid - solid (VLS) growth method using chemical vapor deposition (CVD) technology. Specifically, the researchers hope: 1. **Provide direct evidence**: Prove the incorporation path of Mg dopants in p - type non - polar GaN nanowires. 2. **Understand the incorporation mechanism**: By means of high - resolution transmission electron microscopy (HRTEM), X - ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS), etc., reveal how Mg dopants are incorporated into the nanowires through the Au - Ga/GaN interface. 3. **Verify the doping effect**: Through photoluminescence (PL) research and electrical property tests, confirm the activation of Mg dopants in non - polar GaN nanowires and their influence on the optical and electrical properties of the nanowires. 4. **Optimize the doping concentration**: Explore the influence of different Mg doping concentrations on the morphology, structure and properties of GaN nanowires in order to optimize the Mg doping level and increase the hole concentration. Through these studies, the author hopes to be able to provide important basic data and technical support for the future design and preparation of optoelectronic devices based on GaN nanowires (such as LEDs, lasers, high - electron - mobility transistors (HEMTs), logic gates, photodetectors, solar cells and gas sensors).

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

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