Abstract:Modeling of the phosphorus radiation-enhanced diffusion in the course of implantation of high-energy protons into an elevated-temperature silicon substrate and during its treatment in a hydrogen-containing plasma with addition of a diffusant has been carried out. It follows from the results obtained that the radiation-enhanced diffusion occurs by means of formation, migration, and dissociation of "impurity atom -- silicon self-interstitial" pairs being in a local thermodynamic equilibrium with substitutionally dissolved impurity atoms and nonequilibrium point defects generated due to external irradiation. The resulting value of the average migration length of nonequilibrium silicon self-interstitials decreases from 0.19 micrometer for proton energy of 140 keV to 0.09 and 0.08 micrometer for energies of 110 and 80 keV, respectively. The decrease of the average migration length with the proton energy can be due to the interaction of silicon self-interstitials with the vacancies generated at the surface or with the defects formed in the phosphorus implanted region. Based on the pair diffusion mechanism, a theoretical investigation of the form of impurity profiles that can be created in thin silicon layers due to the radiation-enhanced diffusion was carried out. It is shown that depletion of the uniformly doped silicon layer occurs during plasma treatment except for the silicon -- insulator interface where a narrow region with a high impurity concentration is formed. The results of calculations give a clear evidence in favor of further investigation of various doping processes based on the radiation-enhanced diffusion, especially the processes of plasma doping, to develop a cheap method for the formation of strictly assigned impurity distributions in the local semiconductor domains.

PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

Raman spectroscopy of silicon, doped with platinum and irradiated by protons

Radiation-enhanced diffusion of impurity atoms in silicon layers

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Study of irradiation damage in silicon at different scales

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Evolution of secondary defects in arsenic implanted Si

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations

The homogeneity of the photonuclear transmutation doping of silicon