Abstract:AlGaN-based vertical-cavity surface-emitting lasers (VCSELs) have garnered recent interest due to their superior material properties and device benefits. Nevertheless, AlGaN-based VCSELs are extremely difficult to realize due to numerous technical limitations associated with both material epitaxial growth and chip fabrication. This study fabricated a high-quality AlGaN multiple quantum wells (MQWs) structure using epitaxial lateral overgrowth and analyzed it using X-ray diffraction (XRD) and photoluminescence (PL) measurements. With an edge dislocation density (DD) of 10 9 cm −2 , XRD measurements reveal that the AlN template is nearly fully relaxed. The subsequent AlGaN/AlN superlattice (SL) layer is introduced to decrease the edge DD, and the edge DD in the MQWs is ∼10 8 cm −2 . According to PL measurements, the internal quantum efficiency of the MQWs is as high as 62%, and radiative recombination dominated the emission of the MQWs at room temperature. Using these epitaxial wafers, ultraviolet radiation C (UVC) VCSELs were fabricated using various techniques, including laser lift-off (LLO) and chemical mechanical polishing (CMP). The crystallinity of the MQWs was unaffected by sapphire substrate removal using LLO. After removing the sapphire substrate using LLO and CMP, UVC surface-stimulated emission was observed in MQWs. AlGaN-based UVC VCSELs with lasing wavelengths of 275.91, 276.28, and 277.64 nm have been fabricated. The minimum threshold for UVC VCSELs is 0.79 MW cm −2 , which is a record low.

Impact of the number of well-barrier pair in the MQWs on the carrier distribution and confinement for the AlGaN-based far-UVC LEDs

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

230-nm-wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Size-Dependent UV-C Communication Performance of AlGaN Micro-LEDs and LEDs

Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters

Enhancement of Surface Emission in Deep Ultraviolet AlGaN-based Light Emitting Diodes with Staggered Quantum Wells

Advantages of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Graded Quantum Structures in the Active Region

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode

Performance Improvement of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Step-Like Quantum Barriers

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Controlled Bunching Approach for Achieving High Efficiency Active Region in AlGaN-based Deep Ultraviolet Light-Emitting Devices with Dual-Band Emission

High-quality AlGaN Epitaxial Structures and Realization of UVC Vertical-Cavity Surface-Emitting Lasers

Analysis of the efficiency improvement of 273 nm AlGaN UV-C micro-LEDs