High-Performances AlGaN-based DUV-LED via Under-Level Multiple Quantum Well Configuration

Mohammad Amirul Hairol Aman,Nurul Fathinah Azrisham,Ahmad Fakhrurrazi Ahmad Noorden,Wan Hazman Danial,Muhamad Zamzuri Abdul Kadir

2024-11-24

Abstract:Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface between two materials. It also leads to a low carrier confinement and Quantum Confined Stark Effect (QCSE), contributing to the efficiency droop of the DUV-LED. This work demonstrates an under-level MQW configuration implemented in a DUV-LED with a 257 nm emission wavelength. Three DUV-LED structures, above-, same- and under-level MQW were investigated, covering important optoelectronics properties such as energy band diagram, carrier concentrations, radiative recombination rates and electric field distribution. It is found that the quantum efficiencies, luminescence intensity and light output power of the under-level configuration has been enhanced by nine-, ten- and five-folds, relative to the above-level MQW configuration.

Optics,Applied Physics,Computational Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: how to improve the internal quantum efficiency (IQE) and external quantum efficiency (EQE) of deep - ultraviolet light - emitting diodes (DUV - LEDs) based on AlGaN materials, and reduce efficiency droop. Specifically, the authors have studied problems such as strong polarization effects (spontaneous polarization and piezoelectric polarization), low carrier confinement, and the quantum - confined Stark effect (QCSE) in AlGaN - based DUV - LEDs with high aluminum content.

### Background problems:
1. **Low quantum efficiency**: Due to strong polarization effects, the IQE and EQE in DUV - LEDs are low. The polarization effect generates a built - in electric field at the material interface, causing the separation of carrier wave functions and thus reducing the probability of radiative recombination.
2. **Carrier overflow and low injection efficiency**: Under high injection current, a large number of electrons and holes fail to recombine effectively, resulting in an increase in non - radiative recombination; at the same time, high barriers hinder the effective injection of carriers.
3. **Efficiency droop**: As the injection current increases, the IQE and EQE decrease significantly, which is due to the fact that carrier overflow and low injection efficiency exacerbate the polarization effect.

### Solutions:
The paper proposes a new multi - quantum well (MQW) configuration - "under - level MQW", and conducts a comparative study with the traditional "above - level" and "same - level" MQW structures. By simulating and analyzing key optoelectronic characteristics such as the energy band diagrams, carrier concentrations, radiative recombination rates, and electric field distributions of these structures, the performance improvement effects are evaluated.

### Main findings:
1. **Enhanced carrier confinement**: The under - level MQW configuration significantly enhances the carrier confinement ability and reduces carrier overflow, especially under high injection current.
2. **Improved quantum efficiency**: Compared with the above - level MQW configuration, the IQE, EQE, luminous intensity, and light output power of the under - level MQW are increased by 9 times, 10 times, and 5 times respectively.
3. **Optimized energy band structure**: By forming appropriate barriers and wells, the overflow of electrons and holes is effectively blocked, the radiative recombination rate is increased, and thus the overall performance of the device is improved.

### Conclusions:
By introducing the under - level MQW configuration, the authors have successfully alleviated the polarization effect and carrier overflow problems, significantly improved the quantum efficiency and luminous performance of AlGaN - based DUV - LEDs, and provided an effective strategy for solving the efficiency droop problem. This improvement not only simplifies the manufacturing process of the device but also lays the foundation for the application of high - efficiency DUV - LEDs.