Abstract:Hard x-ray photoelectron spectroscopy (HAXPES) is a powerful and novel emerging technique for the nondestructive determination of electronic properties and chemical composition of bulk, buried interfaces and surfaces. It benefits from the exceptionally large escape depth of high kinetic energy photoelectrons, increasing the information depth up to several tens of nanometers. Complementing HAXPES with an atomic structure sensitive technique (such as x-ray diffraction) opens a new research field with major applications for materials science. At SpLine, the Spanish CRG beamline at the European Synchrotron Radiation Facility, we have developed a novel experimental set-up that combines HAXPES and x-ray diffraction (x-ray reflectivity, surface x-ray diffraction, grazing incidence x-ray diffraction, and reciprocal space maps). Both techniques can be operated simultaneously on the same sample and using the same excitation source. The set-up includes a robust 2S + 3D diffractometer hosting a ultrahigh vacuum chamber equipped with a unique photoelectron spectrometer (few eV < electron kinetic energy < 15 keV), x-ray tube (Mg/Ti), 15 keV electron gun, and auxiliary standard surface facilities (molecular beam epitaxy evaporator, ion gun, low energy electron diffraction, sample heating/cooling system, leak valves, load-lock sample transfer, etc.). This end-station offers the unique possibility of performing simultaneous HAXPES + x-ray diffraction studies. In the present work, we describe the experimental set-up together with two experimental examples that emphasize its outstanding capabilities: (i) nondestructive characterization of the Si/Ge and HfO2/SiO2 interfaces on Ge-based CMOS devices, and (ii) strain study on La0.7Ca0.3MnO3 ultrathin films grown on SrTiO3(001) substrate.

HAXPES reference spectra of Si, SiO2, SiN, SiC, and poly(dimethyl siloxane) with Cr Kα excitation

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Quantification of aluminium and silicon‐containing materials using Ag Lα X‐rays

XPS Al Kα and high energy x-ray photoelectron spectroscopy (HAXPES) Cr Kα measurement of bulk boron

Resonant Raman scattering of a-SiNx:H

Sr-arpes study on the valence band dispersions in single crystal c_(60)

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Synchrotron Radiation Photoemission Spectrum Study on K_3C_(60) Film

SR-arpes study on the valence band dispersions in single crystal C60

X-Ray Photoemission Cross-Section Modulation in Diamond, Silicon, Germanium, Methane, Silane, and Germane

Coordination environment of Si in calcium silicate hydrates, silicate minerals, and blast furnace slags: A XANES database

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Silicon (100)/SiO2 by XPS

Beyond hard x-ray photoelectron spectroscopy: Simultaneous combination with x-ray diffraction

Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al2O3∕Si surfaces

Development of a laboratory system hard X-ray photoelectron spectroscopy and its applications

The development of laboratory‐based high energy sources for XPS

Determination of the Geometric Structure of Core Excited Silane Based on Photoabsorption Spectra Near the Si 2p Edges

Silane Photoabsorption Spectra Near the Si 2p Thresholds: the Geometry of Si 2p Excited SiH 4 **

FEL stochastic spectroscopy revealing silicon bond softening dynamics

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors