Abstract:Silicon drift detectors (SDDs) revolutionized spectroscopy in fields as diverse as geology and dentistry. For a subset of experiments at ultra-fast, x-ray free-electron lasers (FELs), SDDs can make substantial contributions. Often the unknown spectrum is interesting, carrying science data, or the background measurement is useful to identify unexpected signals. Many measurements involve only several discrete photon energies known a priori, allowing single event decomposition of pile-up and spectroscopic photon counting. We designed a pulse function and demonstrated that the signal amplitude and rise time are obtained for each pulse by fitting, thus removing the need for pulse shaping. By avoiding pulse shaping, rise times of tens of nanoseconds resulted in reduced pulse pile-up and allowed decomposition of remaining pulse pile-up at photon separation times down to hundreds of nanoseconds while yielding time-of-arrival information with precision of 10 nanoseconds. Waveform fitting yields simultaneously high energy resolution and high counting rates (2 orders of magnitude higher than current digital pulse processors). We showed that pile-up spectrum fitting is relatively simple and preferable to pile-up spectrum deconvolution. We developed a photon pile-up statistical model for constant intensity sources, extended it to variable intensity sources (typical for FELs) and used it to fit a complex pile-up spectrum. We subsequently developed a Bayesian pile-up decomposition method that allows decomposing pile-up of single events with up to 6 photons from 6 monochromatic lines with 99% accuracy. The usefulness of SDDs will continue into the x-ray FEL era of science. Their successors, the ePixS hybrid pixel detectors, already offer hundreds of pixels, each with similar performance to an SDD, in a compact, robust and affordable package

FEL stochastic spectroscopy revealing silicon bond softening dynamics

Analysis of long-lived effects in high-repetition-rate stroboscopic transient X-ray absorption experiments on thin films

Effect of lattice excitations on transient near edge X-ray absorption spectroscopy

Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy

Attosecond state-resolved carrier motion in quantum materials probed by soft X-ray XANES

Various damage mechanisms in carbon and silicon materials under femtosecond x-ray irradiation

Micro-Raman spectroscopy of ultrashort laser induced microexplosion sites in silicon

Towards Time-Resolved Atomic Structure Determination by X-Ray Standing Waves at a Free-Electron Laser

Interplay of thermal and non-thermal effects in x-ray-induced ultrafast melting

Theoretical and experimental electron diffraction intensity maps for single crystal silicon from an ultrafast source

Excitation signatures of isochorically heated electrons in solids at finite wavenumber explored from first principles

Element-specific electronic and structural dynamics using transient X-ray spectroscopy

Stochastic stimulated electronic x-ray Raman spectroscopy

Hidden correlations in stochastic photoinduced dynamics of a solid-state electrolyte

Capturing Nonlinear Electron Dynamics with Fully Characterised Attosecond X-ray Pulses

Ultrafast Laser-Induced Elastodynamics in Single Crystalline Silicon Part I: Model Formulation

On the interplay of liquid-like and stress-driven dynamics in a metallic glass former observed by temperature scanning XPCS

Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection

Optimal pulse processing, pile-up decomposition and applications of silicon drift detectors at LCLS

Capturing interfacial photoelectrochemical dynamics with picosecond time-resolved X-ray photoelectron spectroscopy

Insights into ultrafast Ge-Te bond dynamics in a phase-change superlattice