Abstract:Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1–10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11–15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Wafer-scale transistor arrays fabricated using slot-die printing of molybdenum disulfide and sodium-embedded alumina

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

High-Yield Production of High-κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation-Assisted Etching Approach

Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

Readily Accessible Metallic Micro Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Stacked printed MoS2 and Ag electrodes using electrohydrodynamic jet printing for thin-film transistors

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Solution-processable 2D semiconductors for high-performance large-area electronics

High‐performance solution‐processed 2D p‐type WSe2 transistors and circuits through molecular doping

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts

Inkjet-Printed, High-Performance MoS2 Transistors and Unipolar Logic Electronics

Channel-protecting Fabrication of Top-Gate MoS2 Transistor Arrays