Abstract:Silver ink is the most widely used conductive material for printing electrodes in the fabrication of all-printed ion gel gated transistors because of their high conductivity and low cost. However, electrochemical instability of printed silver electrodes is generally one of the biggest issues, whether it is in air where silver gets oxidized or in a moisture environment where electrochemical migration occurs. Notwithstanding, the electrochemical stability of printed silver electrodes in ion gel medium has not been studied so far. In this work, we studied the electrochemical instabilities of printed silver electrodes in fully printed ion gel gated single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) and developed some strategies to overcome these issues. All-printed ion gel-based p-type SWCNT TFTs were employed to investigate the impact of electrochemical instabilities on the electrical behavior of printed SWCNT TFTs. The results have demonstrated that printed silver was unstable at anodic and cathodic polarization because of the corrosion by the ionic liquid. Besides, anodic corrosion of silver source/drain electrodes was shown to be responsible for the electrical failure of printed SWCNT TFTs in both the linear and saturated regime. These issues were completely resolved when preventing printed silver electrodes from coming into direct contact with ion gels. For example, ion gels were partially printed in device channels to avoid contacting the printed silver source and drain electrodes. At the same time, silver side-gate electrodes were replaced by inkjet-printed PEDOT:PSS electrodes to avoid gate electrode-related instabilities. Consequently, all-printed electrochemically stable SWCNT TFTs fabricated were obtained with enhanced performance of higher ION/IOFF ratios (105 to 106), smaller subthreshold slopes (∼70 mV/dec), and smaller hysteresis (ΔV = 0.025 V) at gate voltages from 1.2 to -0.5 V. Additionally, the polarity of all-printed SWCNT TFTs was converted from the p-channel to ambipolar while achieving lower leakage currents.

Stacked printed MoS2 and Ag electrodes using electrohydrodynamic jet printing for thin-film transistors

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

EHD-jet patterned MoS2on a high- k dielectric for high mobility in thin film transistor applications

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Inkjet-printed thin-film transistors using surfactant-based transition-metal dichalcogenide nanocomposites suspended in polymeric semiconductors

All inkjet-printed electronics based on electrochemically exfoliated two-dimensional metal, semiconductor, and dielectric

Printed Thin-Film Transistors with Functionalized Single-Walled Carbon Nanotube Inks

All-inkjet-printed MoS2 Field-Effect Transistors on Paper for Low-Cost and Flexible Electronics

Patterning of High-Viscosity Silver Paste by an Electrohydrodynamic-Jet Printer for Use in TFT Applications

Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes

Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor

Overcoming Electrochemical Instabilities of Printed Silver Electrodes in All-Printed Ion Gel Gated Carbon Nanotube Thin-Film Transistors.

All-inkjet-printed High-Performance Flexible MoS2 and MoS2-reduced Graphene Oxide Field-Effect Transistors

Wafer-scale transistor arrays fabricated using slot-die printing of molybdenum disulfide and sodium-embedded alumina

Oxide TFTs with S/D-contacts patterned by high-resolution reverse-offset printed resist layers

43.1: Invited Paper: Large‐area and High‐performance Printed Carbon Nanotube and Metal Oxide Thin Film Transistors and Their Applications

Recent Progress on Jet Printing of Oxide-Based Thin Film Transistors

Toward Printed Molecular Electronics: Direct Printing of Liquid Metal Microelectrode on Self‐Assembled Monolayers

Printed Carbon Nanotube Thin Film Transistors Based on Perhydropolysilazane-Derived Dielectrics for Low Power Flexible Electronics

Development of Materials and Printing Methods for Fabrication of Thin-Film Transistors on Flexible Substrates