Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.

Channel-protecting Fabrication of Top-Gate MoS2 Transistor Arrays

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics

High-Yield Production of High-κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation-Assisted Etching Approach

Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core-Shell Heterostructure.

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Performance Limits Of The Self-Aligned Nanowire Top-Gated Mos2 Transistors

Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors

Homogeneous Dual-Gate MoS2 Field-Effect Transistors Integrated by Atomic Layer Deposition-Based Film Synthesis

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

High-performance monolayer MoS 2 nanosheet GAA transistor