Abstract:Abstract This study reposts the fabrication of top-gate molybdenum disulfide (MoS 2 ) field-effect transistor (FET) by the transfer printing of a gate dielectric in conjunction with a poly(vinyl-alcohol) (PVA) coating for carrier doping. The spin-coated PVA film increases the carrier concentration in MoS 2 , while the back-gate MoS 2 FET cannot be turned off. The transferred top-gate structure with the PVA coating makes it possible to turn off the fabricated device without permanent damage to MoS 2 . The results of this study suggest interesting directions for the research and development of two-dimensional material-based functional devices.

Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors