Abstract:The reliability of power electronic switching components is of great concern for many researchers. For their usage in many mission profiles, it is crucial for them to perform for the duration of their intended lifetime; however, they can fail because of thermal stress. Thus, it is essential to analyze their thermal performance. Non-linear switching action, bifurcation and chaotic events may occur in DC-DC power converters. Consequently, they show different behaviors when their parameters change. However, this is an opportunity to study these bifurcation phenomena and the existence of chaos, e.g., in boost converters, on their performance as the effects of load variations (mission profiles) on the system's behavior. These variations generate many non-linear phenomena such as periodic behavior, repeated period-doubling bifurcations and chaos in the MOSFET drain-source current. Thus, we propose, for the first time, an analysis of the influence of chaos on the junction temperature. First of all, this paper provides a step-by-step procedure to establish an electrothermal model of a C2M0080120D MOSFET with integrated power loss. Then, the junction temperature is estimated by computing the power losses and a thermal impedance model of the switch. Additionally, this model is used to investigate the bifurcation and chaotic behavior of the MOSFET junction temperature. The paper contributes by providing a mathematical model to calculate several coefficients based on experimental data and thermal oscillations. Estimation of the number of cycles to failure is given by the Coffin–Manson equation, while temperature cycles are counted using the rainflow counting algorithm. Further, the accumulated damage results are calculated using the Miner's model. Finally, a comparison is made between the damage accumulated during different mission profiles: significant degradation of the MOSFET's lifetime is pointed out for chaotic currents compared to periodic ones.

Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Preconditioning for Accurate Threshold Voltage Extraction of SiC MOSFETs after AC Bias Temperature Instability in Reliability Tests

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs

SiC MOSFET threshold-stability issues

Impact of Chaos on MOSFET Thermal Stress and Lifetime

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

Short Circuit Capability and Short Circuit Induced $v_{\mathrm{th}}$ Instability of a 1.2-Kv SiC Power MOSFET

Investigation of Threshold Voltage Shift for SiC MOSFET in Switching Operation

Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction

High Temperature Stability and the Performance Degradation of SiC MOSFETs

Electrothermal Modelling and Measurements of Parallel-Connected VTH Mismatched SiC MOSFETs under Inductive Load Switching

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Dynamic Performance Of 4h-Sic Power Mosfets And Si Igbts Over Wide Temperature Range

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests