Open-circuit and short-circuit loss management in wide-gap perovskite p-i-n solar cells

Pietro Caprioglio,Joel A. Smith,Robert D. J. Oliver,Akash Dasgupta,Saqlain Choudhary,Michael D. Farrar,Alexandra J. Ramadan,Yen-Hung Lin,M. Greyson Christoforo,James M. Ball,Jonas Diekmann,Jarla Thiesbrummel,Karl-Augustin Zaininger,Xinyi Shen,Michael B. Johnston,Dieter Neher,Martin Stolterfoht,Henry J. Snaith
DOI: https://doi.org/10.1038/s41467-023-36141-8
IF: 16.6
2023-02-20
Nature Communications
Abstract:Abstract In this work, we couple theoretical and experimental approaches to understand and reduce the losses of wide bandgap Br-rich perovskite pin devices at open-circuit voltage (V OC ) and short-circuit current (J SC ) conditions. A mismatch between the internal quasi-Fermi level splitting (QFLS) and the external V OC is detrimental for these devices. We demonstrate that modifying the perovskite top-surface with guanidinium-Br and imidazolium-Br forms a low-dimensional perovskite phase at the n -interface, suppressing the QFLS-V OC mismatch, and boosting the V OC . Concurrently, the use of an ionic interlayer or a self-assembled monolayer at the p -interface reduces the inferred field screening induced by mobile ions at J SC , promoting charge extraction and raising the J SC . The combination of the n- and p- type optimizations allows us to approach the thermodynamic potential of the perovskite absorber layer, resulting in 1 cm 2 devices with performance parameters of V OC s up to 1.29 V, fill factors above 80% and J SC s up to 17 mA/cm 2 , in addition to a thermal stability T 80 lifetime of more than 3500 h at 85 °C.
multidisciplinary sciences
What problem does this paper attempt to address?