Pushing the Limit of Open‐circuit Voltage Deficit Via modifying Buried Interface in CsPbI3 Perovskite Solar Cells

Chenzhe Xu,Suicai Zhang,Wenqiang Fan,Feiyu Cheng,Haochun Sun,Zhuo Kang,Yue Zhang
DOI: https://doi.org/10.1002/adma.202207172
IF: 29.4
2022-11-21
Advanced Materials
Abstract:Although CsPbI3 perovskites have shown tremendous potential in the photovoltaic field owing to their excellent thermal stability, the device performance is seriously restricted by severe photovoltage loss. The buried titanium oxide/perovskite interface plays a critical role in interfacial charge transport and perovskite crystallization, which is closely related to open‐circuit voltage (VOC) deficit stemming from nonradiative recombination. Herein, we deliberately employ target molecules named 3‐sulphonatopropyl acrylate potassium salts with special functional groups for modifying buried interface, giving rise to favorable functions in terms of passivating interfacial defects, optimizing energetic alignment, and facilitating perovskite crystallization. Experimental characterizations and theoretical calculations reveal that the buried interface modification inhibits the electron transfer barrier and simultaneously improves perovskite crystal quality, thereby reducing trap‐assisted charge recombination and interfacial energetic loss. Consequently, the omnibearing modification regarding the buried interface endows the devices with an impressive efficiency of 20.98%, achieving a record‐low VOC deficit of 0.451 V. The as‐proposed buried interface modification strategy renders with a universal prescription to push the limit of VOC deficit, showing a promising future in developing high‐performance all‐inorganic perovskite photovoltaics. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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