Interface Modification for Energy Levels Alignment and Charge Extraction in CsPbI$_3$ Perovskite Solar Cells

Zafar Iqbal,Fengshuo Zu,Artem Musiienko,Emilio Gutierrez Partida,Hans Kobler,Thomas W. Gries,Gennaro V. Sannino,Laura Canil,Norbert Koch,Martin Stolterfoht,Dieter Neher,Michele Pavone,Ana Belen Munoz-Garcia,Antonio Abate,Qiong Wang
DOI: https://doi.org/10.1021/acsenergylett.3c01522
2023-07-25
Abstract:In perovskite solar cells (PSCs) energy levels alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI$_3$ perovskite and its hole selective contact (Spiro-OMeTAD), realized by a dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a passivated perovskite film, by n-Octyl ammonium Iodide (OAI), we created an upward surface band-bending at the interface by TOPO treatment. This improved interface by the dipole molecule induces a better energy level alignment and enhances the charge extraction of holes from the perovskite layer to the hole transport material. Consequently, a Voc of 1.2 V and high-power conversion efficiency (PCE) of over 19% were achieved for inorganic CsPbI$_3$ perovskite solar cells. Further, to demonstrate the effect of the TOPO dipole molecule, we present a layer-by-layer charge extraction study by transient surface photovoltage technique (trSPV) accomplished by charge transport simulation.
Materials Science,Chemical Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the problems of energy levels alignment and charge extraction at the interface in all - inorganic CsPbI₃ perovskite solar cells. These problems directly affect the performance of the device, especially the open - circuit voltage (Voc) and power conversion efficiency (PCE). By introducing the dipolar molecule tri - n - octylphosphine oxide (TOPO) to modify the interface between CsPbI₃ perovskite and the hole - selective contact material Spiro - OMeTAD, the authors aim to achieve better energy levels alignment and enhance the charge extraction efficiency from the perovskite layer to the hole - transport material. Specifically, the goals of the paper include: 1. **Improve energy levels alignment**: Through TOPO treatment, form an upward surface band bending on the CsPbI₃ surface, thereby optimizing energy levels alignment. 2. **Enhance charge extraction efficiency**: By improving the interface properties, increase the extraction efficiency of holes from the perovskite layer to the hole - transport material. 3. **Improve device performance**: The ultimate goal is to increase the open - circuit voltage (Voc) and power conversion efficiency (PCE) of the device and verify the impact of these improvements on the long - term stability of the device. Through experiments and theoretical simulations, the paper discusses in detail the influence of TOPO treatment on the interface energy levels alignment and charge extraction kinetics, and verifies the practical effects of these improvements through photocurrent - voltage (J - V) measurements and long - term stability tests.