CsI Enhanced Buried Interface for Efficient and UV‐Robust Perovskite Solar Cells

Hang Xu,Yanfeng Miao,Ning Wei,Haoran Chen,Zhixiao Qin,Xiaomin Liu,Xingtao Wang,Yabing Qi,Taiyang Zhang,Yixin Zhao

DOI: https://doi.org/10.1002/aenm.202103151

IF: 27.8

2021-11-27

Advanced Energy Materials

Abstract:The buried interface between the perovskite and the electron transport layer (ETL) plays a vital role for the further improvement of power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). However, it is challenging to efficiently optimize this interface as it is buried in the bottom of the perovskite film. Herein, a buried interface strengthening strategy for constructing efficient and stable PSCs by using CsI‐SnO2 complex as an ETL is reported. The CsI modification facilitates the growth of the perovskite film and effectively passivates the interfacial defects. Meanwhile, the gradient distribution of Cs+ contributes to a more suitable band alignment with the perovskite, and the incorporation of Cs+ into the perovskite at the bottom interface enhances the resistance against UV illumination. Eventually, a significantly improved PCE up to 23.3% and a much‐enhanced UV stability of FAPbI3‐based PSCs are achieved. This work highlights the importance of cesium‐enhanced interfaces and provides an effective approach for the simultaneous realization of highly efficient and UV‐stable perovskite solar cells. The buried interface between the perovskite and the electron transport layer is crucial for the further improvement of efficiency and stability of perovskite solar cells. Herein, the SnO2/perovskite buried interface is enhanced by cesium modification. The CsI‐SnO2 complex facilitates growth of perovskite films and suppresses the carrier recombination. The champion efficiency of modified devices reaches 23.3% with excellent UV stability.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels