Abstract:Abstract Quantum bits, or qubits, are an example of coherent circuits envisioned for next-generation computers and detectors. A robust superconducting qubit with a coherent lifetime of O (100 μs) is the transmon: a Josephson junction functioning as a non-linear inductor shunted with a capacitor to form an anharmonic oscillator. In a complex device with many such transmons, precise control over each qubit frequency is often required, and thus variations of the junction area and tunnel barrier thickness must be sufficiently minimized to achieve optimal performance while avoiding spectral overlap between neighboring circuits. Simply transplanting our recipe optimized for single, stand-alone devices to wafer-scale (producing 64, 1x1 cm dies from a 150 mm wafer) initially resulted in global drifts in room-temperature tunneling resistance of ± 30%. Inferring a critical current I c variation from this resistance distribution, we present an optimized process developed from a systematic 38 wafer study that results in < 3.5% relative standard deviation (RSD) in critical current ( ≡ σ I c / I c ) for 3000 Josephson junctions (both single-junctions and asymmetric SQUIDs) across an area of 49 cm 2 . Looking within a 1x1 cm moving window across the substrate gives an estimate of the variation characteristic of a given qubit chip. Our best process, utilizing ultrasonically assisted development, uniform ashing, and dynamic oxidation has shown σ I c / I c = 1.8% within 1x1 cm, on average, with a few 1x1 cm areas having σ I c / I c < 1.0% (equivalent to σ f / f < 0.5%). Such stability would drastically improve the yield of multi-junction chips with strict critical current requirements.

Optimization of shadow evaporation and oxidation for reproducible quantum Josephson junction circuits

Fabrication of Al/AlOx/Al Josephson Junctions and Superconducting Quantum Circuits by Shadow Evaporation and a Dynamic Oxidation Process

Wafer-scale uniformity improvement of Dolan-bridge Josephson junction by shadow evaporation bias correction

Improving Josephson junction reproducibility for superconducting quantum circuits: junction area fluctuation

Improving wafer-scale Josephson junction resistance variation in superconducting quantum coherent circuits

Aluminum Josephson junction microstructure and electrical properties modified by thermal annealing

Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing

High Density Fabrication Process for Single Flux Quantum Circuits

Character and Fabrication of Al/Al2O3/Al Tunnel Junctions for Qubit Application.

Superconducting qubits at scale

Mitigation of critical current fluctuation of Josephson junctions in superconducting quantum circuits

Effect of Etching Methods on Dielectric Losses in Transmons

Superconducting qubits on silicon substrates for quantum device integration

Mitigation of frequency collisions in superconducting quantum processors

Fabrication of Al/AlOx/Al Josephson Junctions on Silicon and Sapphire Substrates Using a Cold-Development Technique

Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits

Overlap junctions for high coherence superconducting qubits

Advanced CMOS manufacturing of superconducting qubits on 300 mm wafers

Fabrication of Al/AlO x /Al Josephson junctions on silicon and sapphire substrates using a cold-development technique

Fabrication of Al/AlOx/Al junctions with high uniformity and stability on sapphire substrates