Abstract:We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,\mu s}$, corresponding to Q = 5 million, and a highest observed value of ${501\,\mu s}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation of loss is achieved by reducing the presence of oxide, a known host of defects, near the substrate-metal interface, by growing aluminum films thicker than 300 nm. A loss analysis of coplanar-waveguide resonators shows that the improvement is owing to a reduction of dielectric loss due to two-level system defects. We perform time-of-flight secondary ion mass spectrometry and observe a reduced presence of oxygen at the substrate-metal interface for the thicker films. The correlation between the enhanced performance and the film thickness is due to the tendency of aluminum to grow in columnar structures of parallel grain boundaries, where the size of the grain depends on the film thickness: transmission electron microscopy imaging shows that the thicker film has larger grains and consequently fewer grain boundaries containing oxide near this interface. These conclusions are supported by numerical simulations of the different loss contributions in the device.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to reduce the interfacial dielectric loss in aluminum - silicon transmon qubits by optimizing the thickness of the aluminum film, thereby increasing their energy relaxation time $T_1$ and quality factor $Q$. Specifically, the authors focus on the dielectric loss problem caused by oxide defects in superconducting qubits with an aluminum - silicon structure. These oxide defects mainly exist in the metal - substrate interface (SM), metal - air interface (MA) and substrate - air interface (SA). Especially at the metal - substrate interface, they can cause significant energy loss. To alleviate this problem, the authors proposed and verified a strategy: by increasing the thickness of the aluminum film to more than 300 nm, the oxide defects near the interface can be reduced, thereby reducing the dielectric loss and further improving the performance of the qubits. ### Main Findings and Conclusions 1. **Experimental Results**: - By preparing aluminum films with different thicknesses (150 nm, 300 nm and 500 nm) and measuring the corresponding qubit performance, it was found that on the thicker aluminum films, the energy relaxation time $T_1$ of the qubits was significantly increased, reaching up to 270 μs, corresponding to a quality factor $Q = 5\times10^6$. - For the 500 - nm - thick aluminum film, the average $T_1$ of the best qubits reached 270 μs, and in some cases even reached 501 μs. 2. **Material Analysis**: - Using time - of - flight secondary ion mass spectrometry (ToF - SIMS) for material depth analysis, it was found that as the thickness of the aluminum film increased, the oxygen signal intensity at the metal - substrate interface weakened, indicating a reduction in oxide defects. - Transmission electron microscope (TEM) images showed that the thicker aluminum films had larger grain sizes, reducing the number of grain boundaries, thereby reducing the presence of oxide defects. 3. **Numerical Simulation**: - By numerically simulating the participation ratio of different interfaces, the results showed that the thicker aluminum films could significantly reduce the dielectric loss at the metal - substrate interface, thereby increasing the overall quality factor $Q$. 4. **Mechanism Explanation**: - Thicker aluminum films tend to form a columnar growth structure, and the grain size increases with the increase in thickness, reducing the number of grain boundaries, thereby reducing the generation of oxide defects and reducing the dielectric loss. ### Summary By increasing the thickness of the aluminum film, especially more than 300 nm, the oxide defects at the metal - substrate interface can be effectively reduced, the dielectric loss can be reduced, and the energy relaxation time and quality factor of the aluminum - silicon superconducting qubits can be significantly increased. This strategy provides new ideas and methods for the future development of high - performance superconducting qubits.

Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits

Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging

Enhanced Superconducting Qubit Performance Through Ammonium Fluoride Etch

Effect of Etching Methods on Dielectric Losses in Transmons

Observation of Interface Piezoelectricity in Superconducting Devices on Silicon

Superconducting qubits on silicon substrates for quantum device integration

Mitigation of Quasiparticle Loss in Superconducting Qubits by Phonon Scattering

Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Mitigating Losses of Superconducting Qubits Strongly Coupled to Defect Modes

Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing

Eliminating Surface Oxides of Superconducting Circuits with Noble Metal Encapsulation

Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation

Substrate surface engineering for high-quality silicon/aluminum superconducting resonators

High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices

Microscopic relaxation channels in materials for superconducting qubits

Wiring surface loss of a superconducting transmon qubit

Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

Compact vacuum gap transmon qubits: Selective and sensitive probes for superconductor surface losses

Reducing two-level systems dissipations in 3D superconducting niobium resonators by atomic layer deposition and high temperature heat treatment