Abstract:We have studied the ambient air oxidation of chemical vapor deposition (CVD) grown monolayers of the semiconducting transition metal dichalcogenide (S-TMD) WS$_{2}$ using optical microscopy, laser scanning confocal microscopy (LSCM), photoluminescence (PL) spectroscopy, and atomic force microscopy (AFM). Monolayer WS$_{2}$ exposed to ambient conditions in the presence of light (typical laboratory ambient light for weeks, or typical PL spectroscopy map), exhibits damage due to oxidation which can be detected with the LSCM and AFM; though may not be evident in conventional optical microscopy due to poorer contrast and resolution. Additionally, this oxidation was not random, and correlated with 'high-symmetry' and red-shifted areas in the PL spectroscopy map - areas thought to contain a higher concentration of sulfur vacancies. In contrast, samples kept in ambient and darkness showed no signs of oxidation for up to 10 months. Low-irradiance/fluence experiments showed that samples subjected to excitation energies at or above the trion excitation energy (532 nm/2.33 eV and 660 nm/1.88 eV) oxidized in as little as 7 days, even for irradiances and fluences eight and four orders of magnitude lower (respectively) than previously reported. No significant oxidation was observed for 760 nm/1.63 eV light exposure, which lies below the trion excitation energy in WS$_{2}$. The strong wavelength dependence and apparent lack of irradiance dependence suggests that ambient oxidation of WS$_{2}$ is initiated by photon-mediated electronic band transitions, that is, photo-oxidation. These findings have important implications for prior, present and future studies concerning S-TMDs measured, stored or manipulated in ambient conditions.

Photoresponse of O2 plasma treated WS2 monolayers synthesized by chemical vapor deposition

Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS 2 Monolayers

Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Oxidation of Monolayer WS$_{2}$ in Ambient is a Photoinduced Process

Influence of direct deposition of dielectric materials on the optical response of monolayer WS 2

Photoluminescence Enhancement in WS 2 Nanosheets Passivated with Oxygen Ions: Implications for Selective Area Doping

Extraordinary room-temperature photoluminescence in WS2 monolayers

Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers.

The Evolution of MoS2 Properties under Oxygen Plasma Treatment and Its Application in MoS2 Based Devices

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Optical response of monolayer, few-layer and bulk tungsten disulfide

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Promoting the yield and crystallinity of synthetic WS2 via precursor pretreatment

Spatial Non-Uniformity in Exfoliated WS2 Single layers

Instability and Protection of Monolayer WS2 under Heating and Corona Discharge Conditions

Improved Temporal Response of MoS 2 Photodetectors by Mild Oxygen Plasma Treatment.

Room Temperature Micro-Photoluminescence Studies of Colloidal WS2 Nanosheets

Improved Temporal Response of MoS2 Photodetectors by Mild Oxygen Plasma Treatment

Temperature and Power-Dependent Photoluminescence Spectroscopy in Suspended WSe2 Monolayer

Thermal stability of monolayer $WS_2$ in BEOL conditions