Abstract:We investigate the effects of direct deposition of different dielectric materials (AlOx, SiOx, SiNx) onto atomically thin TMDC WS2 on its optical response using atomic layer deposition (ALD), electron beam evaporation (EBE), plasma-enhanced chemical vapor deposition (PECVD), and magnetron sputtering. The photoluminescence measurements reveal quenching of the excitonic emission after all deposition processes, which is linked to the increased level of charge doping and associated rise of the trion emission and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes in excitonic emission with the increased levels of lattice disorder and defects. In particular, we show that the different doping levels in a monolayer WS2 capped by a dielectric material are strongly related to the defects in the WS2 crystal introduced by all capping methods, except for ALD. The strong charge doping in the ALD-capped sample seems to be caused by other factors, such as deviations in the dielectric layer stoichiometry or chemical reactions on the monolayer surface, which makes ALD distinct from all other techniques. Overall, the EBE process results in the lowest level of doping and defect densities and in the largest spectral weight of the exciton emission in the PL. Sputtering is revealed as the most aggressive dielectric capping method for WS2, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS2, which can provide valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices.

Effect of process parameters on structural and optical properties of sputter deposited WS 2 films

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Dielectric Functions and Critical Points of Crystalline WS2 Ultrathin Films with Tunable Thickness.

Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films

Effects of Process Parameters on the Properties of W-doped In_2O_3 Transparent Conductive Thin Films Prepared by Dc Magnetron Sputtering

Phase composition of sputter deposited tungsten thin films

Influence of direct deposition of dielectric materials on the optical response of monolayer WS 2

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Spectroscopy of monolayer and multilayer tungsten disulfide under high pressure

Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapor deposition-tungsten disulfide thin films

Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements

Rational Design for High-Yield Monolayer WS2films in Confined Space under Fast Thermal Processing.

Thermal stability of monolayer $WS_2$ in BEOL conditions

Photoresponse of O2 plasma treated WS2 monolayers synthesized by chemical vapor deposition

Extraordinary room-temperature photoluminescence in WS2 monolayers

Effects of Deposition Temperature on Microstructure and Tribological Properties of Pulsed Laser Deposited WSx Films

Direct Regulation of O/W Stoichiometric Ratio and Microstructure in Tungsten Oxide Electrochromic Films by Ar Pressure Using Oxide Target Sputtering

Minimizing Sputter-Induced Damage During Deposition of WS2 Onto Graphene

WS2 with Controllable Layer Number Grown Directly on W Film