Abstract:Transition-metal dichalcogenides (TMDs) have attracted intense research interest for a broad range of device applications. Atomic layer deposition (ALD), a CMOS compatible technique, can enable the preparation of high-quality TMD films on 8 to 12 in. wafers for large-scale circuit integration. However, the ALD growth mechanisms are still not fully understood. In this work, we systematically investigated the growth mechanisms for WS2 and found them to be strongly affected by nucleation density and film thickness. Transmission electron microscope imaging reveals the coexistence and competition of lateral and vertical growth mechanisms at different growth stages, and the critical thicknesses for each mechanism are obtained. The in-plane lateral growth mode dominates when the film thickness remains less than 5.6 nm (8 layers), while the vertical growth mode dominates when the thickness is greater than 20 nm. From the resulting understanding of these growth mechanisms, the conditions for film deposition were optimized and a maximum grain size of 108 nm was achieved. WS2-based field-effect transistors were fabricated with electron mobility and on/off current ratio up to 3.21 cm2 V–1 s–1 and 105, respectively. Particularly, this work proves the capability of synthesis of TMD films in a wafer scale with excellent controllability of thickness and morphology, enabling many potential applications other than transistors, such as nanowire- or nanosheet-based supercapacitors, batteries, sensors, and catalysis.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c13467.Growth rate of the ALD WS2 process; AFM images at five positions of the 600-cycle annealed WS2 film; SEM images of films in different growth stages; EDX mapping of smooth planar film WS2 films; HAADF-STEM and BF-TEM images of perpendicular WS2 nanowires; cross-sectional TEM of perpendicular WS2 nanowires; full spectra of as-deposited and annealed WS2 films; and XRD pattern of WS2 films with 400 ALD cycles (PDF)This article has not yet been cited by other publications.

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