Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapor deposition-tungsten disulfide thin films

J-W. Chung,A. Adib,Z.R. Dai,K. Adib,F.S. Ohuchi
DOI: https://doi.org/10.1016/s0040-6090(98)00954-7
IF: 2.1
1998-11-01
Thin Solid Films
Abstract:Metal-organic chemical vapor deposition (MOCVD) using tungsten hexacarbonyl (W(CO)6) and H2S as precursors was employed to prepare tungsten disulfide (WS2) thin films on Si substrates. Various degrees of preferred orientation as characterized by the WS2 crystallites with their basal planes grown parallel to the substrate (c(=)) and non-parallel to the substrate (c(∥)) were obtained. Raman scattering was applied to study the effects of preferred orientation in WS2 thin films on the Raman processes. As the fraction of c(∥) crystallites increases in the thin film structure, a large second order Raman peak appeared on a shoulder of the A1g mode to the lower wavenumbers. Based on the analysis previously provided (C. Sourisseau, F. Cruege, M. Fouassier, Chem. Phys. 150 (1991) 281), this peak was characterized by two phonon-coupling originating from longitudinal acoustic (LA) and transverse acoustic (TA) phonons at the K point of the Brillouin zone. Cross-section high resolution electron microscopy (HREM) revealed that the WS2 thin films grew with c(=) near the interface, followed by the formation of non-parallel crystallite ( c(∥)) co-mixing with c(=). Transition from c(=) to c(∥) in the microstructure occurred smoothly, showing curvature in the lattice image. Occurrence of the localized curvature in the thin film microstructure seems to be responsible for the enhancement of the two phonon-coupling process.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
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