Enhanced Field-Effect Mobility of MoS 2 Transistors Prepared by Chemical Vapor Deposition with Low-Power Oxygen Plasma Treatment
Si‐Chen Lee,Shih-Yen Lin,Chong-Rong Wu,Xiang-Rui Chang
Abstract:Low-Power Oxygen Plasma Treatment Kuan-Chao Chen , Chong-Rong Wu , Xiang-Rui Chang, Si-Chen Lee and Shih-Yen Lin 2 Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan Research Center for Applied Science, Academia Sinica, Taipei 11529, Taiwan shihyen@gate.sinica.edu.tw Abstract Two-dimensional (2-D) material, such as graphene, has emerged as a possible material for transistor applications in the < 10 nm technology node. However, due to the zero-bandgap nature, the low ON/OFF ratio of graphene transistors has limited its practical applications. In this case, other 2-D material with bandgaps such as MoS2 has attracted attentions for transistor applications [1]. However, although high ON/OFF ratios are observed for MoS2 transistors, its low field-effect mobility has become a major disadvantage of this device. In this report, we have demonstrated that by using low-power oxygen plasma treatment, enhanced field-effect mobility values can be observed for MoS2 transistors prepared by transition metal deposition following by high-temperature sulfurization. The flow chart for the MoS2 transistor fabrication procedure is shown in Fig. 1. The MoS2 film is grown on a sapphire substrate by using 800 C sulfurization of 1 nm Mo pre-deposited on the substrate by using a sputtering system. The cross-sectional HRTEM image of the MoS2 film shown as an inset figure in Fig. 1 reveals that 5-layer MoS2 is obtained. After growth, the MoS2 film is transferred to a 300 nm SiO2/p-Si substrate with pre-patterned 5 nm Ti/50 nm Au electrodes fabricated by using standard photo-lithography [2]. After channel definition by using a reactive ion etching system, back-gated MoS2 transistors with channel length/width 5/150 μm are fabricated. The device’s optical microscopy image is also shown as an inset figure in Fig. 1. After fabrication, the device is treated by low-power oxygen plasma (20 W) for 5 and 10 sec., respectively. During this procedure, a DC bias of 30 V is applied to the sample holder. The ID-VGS curves of the device with 0, 5 and 10 sec. plasma treatment time are shown in Fig. 2. As shown in the figure, the threshold voltages (Vth) of the device shift from -78, -116 to -176 V with increasing plasma treatment time, which suggest that increasing electron concentrations are obtained in the MoS2 channel after low-power oxygen plasma treatment. The field-effect mobility values of the device derived from the ID-VGS curves also increase from 0.01, 2.5 to 9.6 cmVs with increasing plasma treatment time. Also observed in the figure are the decreasing drain currents with increasing gate biases higher than -144 V for the device after 10 sec. plasma treatment. The phenomenon suggests that severe electron scattering is observed for the device after 10 sec. plasma treatment, which also indicates that electron concentrations increase very rapidly with increasing plasma treatment time. The results are very different with the photoluminescence quenching of MoS2 films treated under relatively high oxygen plasma powers, which indicates that damages to the films are introduced during the plasma treatment process [3]. To explain the phenomenon of Vth shifting and mobility increasing of MoS2 transistors after low-power oxygen plasma treatment, a model is established. The derived field-effect mobility value of the MoS2 transistor in this report is far below that of the device fabricated on exfoliated MoS2 flakes [1]. Therefore, the defect density of the grown MoS2 film should be much higher than the exfoliated ones. Assuming the defects on the MoS2 film act as electron traps for devices, since the low plasma power is not sufficient to etch or damage the film, O ions in the plasma gas will be attracted by the defects and attach to the film. With increasing plasma treatment time, more defects will be de-activated with increasing O ion attachment. In this case, increasing electron concentrations will induce decreasing threshold voltages. The lowered defect scatterings will result in increasing field-effect mobility values. References [1] W. Liu, J.H. Kang, W. Cao, D. Sarkar, Y. Khatami, D. Jena, K. Banerjee, IEDM (2013), 19.4.1-19.4.4. [2] C. R. Wu et. al., J. of Phys. D: Appl. Phy. (2015) 48 (43), pp. 435101. [3] N. Kang, L. Tetard, Saiful I. Khondaker et., J. Phys. Chem. C (2014), 118 (36), pp 21258–21263. Figures
Engineering,Materials Science,Physics