Abstract:A third generation mist chemical vapor deposition (3rd G mist CVD) system was used to grow six single-layer and two heterostructure α-(AlxGa1−x)2O3 buffers on c-plane sapphire substrates for the subsequent deposition of conductive Sn-doped α-Ga2O3 (Sn:α-Ga2O3) thin films. In the six single-layer buffers, the Al contents x increased from 0 to 0.66. The two heterostructure buffers consisted of six ∼20-nm- and ∼100-nm-thick layers laying on top of each other. The 3rd G mist CVD system enabled the growth of these complicated multi-layer heterostructures in a single run, while mono-crystallinity was still maintained in all grown layers. Strain was observed in the 20-nm heterostructure, while the layers in the 100-nm heterostructure almost fully relaxed and the Vegard's law was followed even when the α-(AlxGa1−x)2O3 layers were stacked on each other. Transmission electron microscopy analyses show that the dislocation densities remained high in the order of 1010 cm−2 despite the employment of the buffers. PtOx and AgOx Schottky diodes (SDs) were fabricated on the Sn:α-Ga2O3 films. The barrier height vs ideality factor plots could be fitted by linear dependences, indicating that the large ideality factors observed in α-Ga2O3 SDs could be explained by the inhomogeneity of the SDs. The extrapolation of the dependences for the PtOx and AgOx SDs yielded homogeneous Schottky barrier heights of ∼1.60 eV and 1.62 eV, respectively, suggesting that the Fermi level was pinned at the Ec − 1.6 eV level. The Sn:α-Ga2O3 film grown on the strained 20-nm heterostructure buffer showed best characteristics overall.

Two-step growth of κ-Ga2O3 thin films on 4H-SiC substrates with temperature-varied buffer layers using mist chemical vapor deposition

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

Influence of HCl concentration in source solution and growth temperature on formation of α-Ga2O3 film via mist-CVD process

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

High Crystallization Quality beta-Ga2O3 Films Prepared by Chemical Vapor Deposition

A Novel Method for Growing α-Ga2O3 Films Using Mist-CVD Face-to-face Heating Plates

Heteroepitaxial growth of -Ga<sub>2</sub>O<sub>3</sub> thin films on c-plane sapphire substrates with -(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> intermediate buffer layer by mist-CVD method

Effects of Growth Temperature on Phase Transformation and Crystal Quality of Ga2O3 Films Grown on Si/AlN Composite Substrates by MOCVD

α-(Al x Ga 1−x ) 2 O 3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga 2 O 3 thin films via mist chemical vapor deposition

Composition analysis of β-(InxGa1-x)2O3 thin films coherently grown on (010) β-Ga2O3 via mist CVD

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Controlled Crystallinity of a Sn-Doped α-Ga2O3 Epilayer Using Rapidly Annealed Double Buffer Layers

High-quality Heteroepitaxial Growth of (3-Ga2o3 with NiO Buffer Layer Based on Mist-CVD

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy

Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD