Abstract:Direct chemical vapor deposition (CVD) of graphene on any desired substrate is always required to manufacture high-quality heterojunctions with excellent interfacial properties. Herein, the growth of graphene on cubic-silicon carbide (3C-SiC) surfaces using conventional high-temperature direct thermal CVD and plasma-enhanced CVD (PECVD) is explored, which is hardly reported to date. Since 3C-SiC substrates are not available, the controlled self-limited 3C-SiC layers on the Si(100) substrates were grown at different temperatures (900-1200 degrees C) via thermal-CVD technique to obtain virtual 3C-SiC substrates. The direct production of graphene via thermal CVD could not be achieved on such 3C-SiC surfaces. The density functional theory and molecular dynamics simulations confirm that the carbon atom diffusion over the 3C-SiC surface is extremely low, like over the Si surface, which leads to no graphene growth. A similar growth mechanism may be attributed to their similar crystal structure viz diamond cubic for Si and zinc blend for 3C-SiC. However, graphene nanowalls (GNWs) were successfully grown on both Si and 3CSiC/Si surfaces at 700 degrees C via the PECVD technique, where similar surface morphologies were observed because the growth mechanism of GNWs is independent of substrate type. Moreover, I-V characterization was performed for different SiC/Si heterostructures and their corresponding GNWs/SiC/Si heterostructures, respectively. The current conduction improved considerably more for GNW/SiC/Si heterostructures as compared to SiC/Si heterostructures, but the creation of a SiC interfacial layer as well as its quality affected the conductivity of GNWs/SiC/Si heterostructures. The inevitable formation of an interfacial SiC layer during the direct graphene growth via thermal CVD on Si substrates can seriously affect the performance of graphene/Si heterojunction devices. Hence, PECVD growth of graphene is an ideal option to fabricate graphene/Si heterojunction devices with excellent interfacial properties or graphene/3C-SiC/Si heterojunction devices for various electronic/optoelectronic applications such as gas sensors and photovoltaic devices.

Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

Statistical analysis of characteristic parameters of graphene/p-Si junctions prepared under similar conditions

Temperature Dependent Characteristics of Graphene/silicon Schottky Junction

Temperature dependent transport characteristics of graphene/n-Si diodes

Electrical properties of Graphene/Silicon structure with Al2O3 interlayer

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Chemical Vapor Deposition of Graphene on Self-Limited SiC Interfacial Layers Formed on Silicon Substrates for Heterojunction Devices

Effects of silicon surface defects on the graphene/silicon Schottky characteristics

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Investigation of electrical, dielectric and interface state densities of al/ p -Si structures with PTCDA interlayer under different light intensities

Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature

Electronic properties of graphene/p-silicon Schottky junction

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Thermal dependence on electrical characteristics of Au/(PVC:Sm2O3)/n-Si structure

Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy

High Temperature Characteristics of Bilayer Epitaxial Graphene Field-Effect Transistors on Sic Substrate

Wafer-scale synthesis and transfer of monolayer graphene

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment