Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

High Temperature Characteristics of Bilayer Epitaxial Graphene Field-Effect Transistors on Sic Substrate

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Fabrication and Characterization of Graphene Derived from SiC

Quasi-free-standing Bilayer Epitaxial Graphene Field-Effect Transistors on 4H-Sic (0001) Substrates

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF 2 insulators

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Electronic Transport Properties of Top-Gated Epitaxial-Graphene Nanoribbon Field-Effect Transistors on Sic Wafers

Fabrication and Low Temperature Characterazation of Monolayer Graphene Field Effect Transistor

Temperature Dependence Of The Thickness And Morphology Of Epitaxial Graphene Grown On Sic (0001) Wafers

Temperature dependent transport characteristics of graphene/n-Si diodes

Thermal transport at 6H-SiC/graphene buffer layer/GaN heterogeneous interface

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by Sic Buffer Layers

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment