Abstract:The literature has established that the junction parameters in metal-semiconductor rectifying junctions closely depend on the smoothness of the semiconductor surface and the properties of the materials used in contact construction. In addition to metals, materials with excellent properties such as graphene are utilized as contact materials in the fabrication of metal-semiconductor rectifier junctions, which are the fundamental part of many innovative devices, particularly diodes. Ten Au/graphene/p-Si/Al complex structures were created in this study using comparable circumstances. Using the plasma enhanced chemical vapour deposition (PECVD) method, graphene thin film was initially produced on copper foil and subsequently transferred on the clean and polished surface of p-Si semiconductor with aluminum ohmic contact. Electrical measurements such as current-voltage (I–V) and capacitance-voltage (C–V) of the fabricated 10 graphene/p-Si junctions were performed at room temperature and in the dark. Some characteristic parameters such as threshold voltage, ideality factor, barrier height, leakage current and rectification ratio were calculated. The barrier heights from the I–V characteristics varied from 0,532 to 0,736 eV, the ideality factors varied from 2028 to 2,302, and from the C–V characteristics the barrier heights varied from 0,743 to 0,793 eV at 300 kHz. After fitting a Gaussian function to the barrier height distributions derived from the I–V and C–V characteristics, the mean barrier height values were found to be 0,610 eV and 0,772 eV (at 300 kHz), respectively. The value of the lateral homogeneous barrier height for the ten graphene/p-Si junctions prepared wasdetermined to be 0,652 eV based on the linear relationship between the barrier height and the values of the ideality factor.

Temperature dependent transport characteristics of graphene/n-Si diodes

Temperature Dependent Characteristics of Graphene/silicon Schottky Junction

Electronic properties of graphene/p-silicon Schottky junction

Effects of silicon surface defects on the graphene/silicon Schottky characteristics

Impact of Surface States in Graphene/p-Si Schottky Diodes

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Ideal Graphene/Silicon Schottky Junction Diodes

Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

Barrier Height Inhomogeneity in Mixed-Dimensional Graphene/Single CdSe Nanobelt Schottky Junctions

Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure

Temperature dependent electron transport and interface state studies on Ni/n-Si/Al/Ag lateral Schottky junction

High Temperature Characteristics of Bilayer Epitaxial Graphene Field-Effect Transistors on Sic Substrate

Study on the Graphene/Silicon Schottky Diodes by Transferring Graphene Transparent Electrodes on Silicon

Heat dissipation at a graphene-substrate interface.

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Statistical analysis of characteristic parameters of graphene/p-Si junctions prepared under similar conditions

Current Crowding in Graphene-Silicon Schottky Diodes

Thermal annealing and air exposing effect on the graphene/silicon Schottky junctions

The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode.

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes