Abstract:The contacts between semiconductor and metal are vital in the fabrication of nano electronic and optoelectronic devices. The contact type has a great influence on the function realization and performance of the device. In order to prepare multifunctional devices with high performance, it is necessary to modulate the barrier height and contact type at the interface. First-principles calculations based on the density functional theory (DFT) are implemented in the VASP package. The generalized gradient approximation of Perdew, Burke, and Ernzerhof (GGA-PBE) with van der Waals (vdW) correction proposed by Grimme (DFT-D3) is chosen due to its good description of long-range vdW interactions. It is demonstrated that weak vdW interactions dominate between graphene and InSe with their intrinsic electronic properties preserved. We find that the n-type ohmic contact is formed at the graphene/InSe interface with the Fermi level through the conduction band of InSe (ΦBn < 0). The Fermi level of graphene/InSe heterostructure moves down to below the Dirac point of graphene layer, which results in p-type (hole) doping in graphene. Moreover, the external electric field is effective to tune the Schottky barrier, which can control not only the Schottky barrier height but also the type of contact. With the negative external electric field varying from 0 to –1 V/nm, the conduction band minimum of InSe below the Fermi level declines gradually but the n-type ohmic contact is still preserved. Nevertheless, with the positive external electric field varying from 0 to 0.8 V/nm, the conduction band minimum of InSe shifts upward and across the Fermi level, the conduction band minimum of InSe is closer to the Fermi level than the valence band maximum, which indicates that the n-type Schottky contact is formed. The Fermi level moves from the the conduction band minimum to the valence band maximum of InSe when the positive external electric field increases from 0.8 V/nm to 2 V/nm. The n-type Schottky barrier height exceeds the p-type Schottky barrier height gradually, which demonstrates that the positive external electric field transforms the n-type Schottky contact into the p-type Schottky contact at the graphene/InSe interface. When the positive external electric field exceeds 2 V/nm, the valence band of InSe moves upward and cross the Fermi level (ΦBp < 0), the ohmic contact is obtained again. Meanwhile, p-type (hole) doping in graphene is enhanced under negative external electric field and a large positive external electric field is required to achieve n-type (electron) doping in graphene. The external electric field can control not only the amount of charge transfer but also the direction of charge transfer at the graphene/InSe interface.

Barrier Height Inhomogeneity in Mixed-Dimensional Graphene/Single CdSe Nanobelt Schottky Junctions

Influence of Interface Inhomogeneity on the Electrical Transport Mechanism of CdSe Nanowire/au Schottky Junctions

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

Temperature Dependent Characteristics of Graphene/silicon Schottky Junction

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Temperature dependent transport characteristics of graphene/n-Si diodes

Tuning Schottky Barrier in Graphene/inse Van Der Waals Heterostructures by Electric Field

The Role of Permanent and Induced Electrostatic Dipole Moments for Schottky Barriers in Janus MXY/Graphene Heterostructures: a First Principles Study

On Transport Properties of CNT Metal/semiconductor/metal Heterostructures Using First Principles Methods

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I-V-T Technique

Transport properties through alternating borophene and graphene superlattices

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

Schottky Barrier Height Inhomogeneities of Nickel Mono-Silicide/N-Si Contact Studied by I-V-T Technique

Tunable Schottky barrier in graphene/XAg 4 Y (X, Y = S, Se, Te) heterostructures

Electronic transport in graphene-based heterostructures

A graphene/Janus B 2 P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

Schottky barriers in carbon nanotube heterojunctions

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Schottky Barrier Formation at Metal Electrodes and Semiconducting Carbon Nanotubes

The inhomogeneity of Co/p-poly-Si0.84Ge0.16 Schottky contact