Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators

Effective parameters on polydimethylsiloxane/graphene composite-based triboelectric nanogenerator performance

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Fabrication and Characterization of Graphene Derived from SiC

Temperature Effect on Performance of Triboelectric Nanogenerator

Advances in Graphene-Based Electrode for Triboelectric Nanogenerator

High Performance Triboelectric Nanogenerators with Aligned Carbon Nanotubes.

Defect-Mediated Work Function Regulation in Graphene Film for High-Performing Triboelectric Nanogenerators

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

Regulation of nanocrystals structure for high-performance magnetic triboelectric nanogenerator

Unraveling the Mechanisms of Thermal Boundary Conductance at the Graphene-Silicon Interface: Insights from Ballistic, Diffusive, and Localized Phonon Transport Regimes

High Temperature Characteristics of Bilayer Epitaxial Graphene Field-Effect Transistors on Sic Substrate

Electron Transfer Mechanism of Graphene/cu Heterostructure for Improving the Stability of Triboelectric Nanogenerators

Low Temperature Dependence of Triboelectric Effect for Energy Harvesting and Self-Powered Active Sensing

Investigating the Performance of Triboelectric Nanogenerators (tengs) Fabricated Using Various Flexible Polymeric Materials

Raising the Working Temperature of a Triboelectric Nanogenerator by Quenching Down Electron Thermionic Emission in Contact‐Electrification

High-performance triboelectric nanogenerators with laser-induced graphene pattern for efficient charge transfer

Wear- and High-Temperature-Resistant IGNs/ Fe3O4/PI Composites for Triboelectric Nanogenerator

Growth, Characterization, and Properties of Nanographene

Compositional Engineering of Hybrid Organic-Inorganic Lead-Halide Perovskite and PVDF-Graphene for High-Performance Triboelectric Nanogenerators

Chemical structure-based design of triboelectric materials for high-performance TENGs