Abstract:Copper has replaced Aluminum in the high-end electronic products for its excellent electrical conductivity, thermal conductivity and electromigration resistance, which is widely used as interconnection structure as Redistribution Layer (RDL), Cu Pillar Bump, Through Sillcon Via (TSV), and so on. Electroplating Cu with damascene process is the main manufacturing technology in industry production. However, in order to accelerate Cu layer growth from bottom to up, different organic and inorganic additives are used in electroplating process, which causes Cu structure instability. As a result, it is easy to occur recrystallization and grain growth in the process of self-annealing or aging, which affects the mechanical properties and service reliability. For example, in Cu-Cu direct bonding process, the extremely anisotropic grain growth will cross the bonding interface and enhance the bonding strength. In this work, three different structure Cu films, commercial polycrystalline copper (CP-Cu), highly (111)-orientated nanotwinned Cu ((111)-ntCu) and micro-cone arrays with vertical nanotwins Cu (micro-cone ntCu) were electroplated by changing the additives and electrodeposition modes to study their microstructure stability during annealing process. Secondary ion microscopy of three kinds of copper films after aging 1 hour and 4 hours at 400℃ were obtained by Focused Ion Beam and texture orientations were tested by X-ray Diffraction (XRD). The thermal stability of different microstructure during annealing was studied by the above experiments. CP-Cu grain growth was controlled by Ostwald ripening mechanism to reduce surface energy. Nanotwin boundaries and high angle grain boundaries formed stable structure and storage large stress, which facilitated extremely anisotropic grain growth.

Combined effects of residual stress and microstructure on degradation of Cu thin films on Si

Effects and Modulation Mechanism of Crystal Structure on Residual Stress of Cu Films Used for Metallization

Effects Of Target-Substrate Distance On Structure And Residual Stress Of Cu/Si(100) Thin Films

Effect of Chromium Dopant on Microstructure and Resistivity Characteristics of Cu/Si(100) Systems

Effects of Cr Dopant on Microstructure and Properties of Cu Films on Si（100）

Effect of a Thin Cr Layer on the Microstructures and Fracture Behaviours of Copper Films

Thermal stability of electroplated Cu films with different microstructure by annealing treatment

Microstructure evolution in Cu-2.13Fe-0.026P (wt%): The contribution of texture intensity to residual stress variation

Interficial Stability of Cu/Cu(Ru)/Si Contact System for Barrier-Free Copper Metallization

Morphology and microstructure control of sputter-deposited copper films by addition of Cr

The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

The Effects of Passivation Layer and Film Thickness on the Mechanical Behavior of Freestanding Electroplated Cu Thin Films with Constant Microstructure

Phase Structure and Residual Stress in Annealed Cu-W Films

The Effects of Thickness on the Stress Properties of Sputtering Cu Films on Si Wafers

Effect of processing conditions on microstructure and electrical characteristics of Ni thin films

Effects of residual stress on the mechanical properties of copper processed using ultrasonic-nanocrystalline surface modification

Microstructure evolution and anti-wear mechanism of Cu film fabricated by magnetron sputtering deposition

Quasi In Situ Study on the Slipping Behavior and Residual Stress of Copper Strip

Influence of thermal annealing on the microstructure evolution, fracture and fatigue behavior of nanocrystalline Cu films

Effects of Cr Dopant on the Microstructure and Electromigration Performance of Cu Interconnects

The Effects of Annealing on Creep Behavior of Copper Film During Nanoindentation