The Effects of Thickness on the Stress Properties of Sputtering Cu Films on Si Wafers

吴桂芳,宋学平,王荣,刘琦,孙兆奇

DOI: https://doi.org/10.3969/j.issn.1002-8935.2003.03.010

2003-01-01

Abstract:This paper investigates the stress variation with thickness of Cu films on Si wafers deposited by DC sputtering and annealed at 200 ℃. The results show that the stress is relaxed as film thickness increases from 103 nm to 228 nm.

What problem does this paper attempt to address?

Effects Of Target-Substrate Distance On Structure And Residual Stress Of Cu/Si(100) Thin Films

Meng Di,Jiang Zhitao,Li Yuge,Gao Jianying,Lei Mingkai

DOI: https://doi.org/10.11933/j.issn.1007-9289.20190910002

2020-01-01

China surface engineering

Abstract:Cu thin films were deposited on the Si(100) substrate by modulated pulsed power magnetron sputtering (MPPMS). The effect of target-substrate distance on film thickness, microstructure, nanohardness and residual stress was systematically investigated by using SEM, analyzing crystal structure by XRD, nanoindentor and Stoney equation methods. With increasing the target-substrate distance, the deposition rates of Cu/Si(100) thin films decrease due to reduction of both the deposition flux and particle energy. The microstructure of the Cu/ Si(100) thin films also change from the dense zone T structure to the zone I structure with decrease of the Cu(111) grain size I, the hardness and elastic modulus of the thin films correspondently decrease with residual tensile stress of about 400 MPa. The reduced deposition ion flux and energy with the increase of target-substrate distance determine the main growth mode of the thin film grains as coalesce and shrinkage process, resulting in the Cu/Si(100) films with a residual tensile stress state. The high deposition flux and ion energy of MPPMS could effectively control the residual stress of Cu/Si(100) films.
Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Gu Pei-Fu,Zheng Zhen-Rong,Zhao Yong-Jiang,Liu Xu

DOI: https://doi.org/10.7498/aps.55.6459

IF: 0.906

2006-01-01

Acta Physica Sinica

Abstract:The stress of TiO2 and SiO2 thin films has been researched, including stress model, measurement method and experimental results for different preparation conditions. Based on the model of curvature of deformed substrate, the stress of the films deposited with and without ion assist as well as with different substrate temperature has been measured and some useful results for both single layers and multilayer system of TiO2 and SiO2 have been obtained. The effect of packing density of the layer on stress is found as follows: the film with lower packing density shows a tensile and that with high pacing density shows a compress stress. The accumulated stress in multilayer system even can be diminished to zero by adjusting the preparation parameters.
Combined effects of residual stress and microstructure on degradation of Cu thin films on Si

Junhee Lee,Sanghun Park,Kangsan Kim,Haechan Jo,Dongwoo Lee

DOI: https://doi.org/10.1016/j.tsf.2022.139607

IF: 2.1

2022-11-24

Thin Solid Films

Abstract:In this paper, combined effects of residual stress and microstructure on degradation of Cu thin films on Si have been investigated. Magnetron sputtering with different processing parameters produced cracked and non-cracked Cu films with various grain sizes and residual stresses. Phase transformation and the change in electrical resistance of the Cu thin films have been analyzed for different annealing conditions. It has been revealed that non-cracked and large-grained (25.2 ± 8.9nm) Cu films with high tensile residual stress (186 MPa) result in the most significant degradation (sheet resistance increase of 894%) upon annealing at 300°C. Specimens with smaller grains (17.3 ± 6.4 nm) and low residual stress (41.6 MPa) or cracks showed no increase in sheet resistance after annealing at 300°C. The microstructural evaluation showed that residual stress of Cu affects the grain growth rate during annealing, which is closely related to the Cu/Si interdiffusion behavior.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Study on elastic modulus of ultra-thin copper films by in-situ SEM-SPM nanoindentation

Bo-hui ZHAO,Yan-ping LIU,Jin-yao MA,Jin WANG,Jun-xia Lü,Yue-fei ZHANG

DOI: https://doi.org/10.3969/j.issn.1000-6281.2017.05.004

2017-01-01

Abstract:In this paper, based on the Hertzian contact theory and King model, the elastic modulus of ultra-thin copper film with thickness of 40, 60, 80 nm deposited by direct current magnetron sputtering ( DCMS) and atomic deposition ( ALD) in the Si of (100) direction were investigated by scanning electron microscopy-scanning probe microscopy ( SEM-SPM) combined system. It has been found that the elastic modulus of Cu films with various thicknesses deposited by DCMS and ALD were obtained as from (95 ± 2) GPa to (125 ± 4)GPa and from (99 ± 2)GPa to (154 ± 6)GPa, and they are 6% ~71% larger than that of their bulk counterpart (90 GPa) . Furthermore, the elastic modulus of Cu films, either deposited by DCMS or by ALD, are closely related to the film thickness and decreases linearly with the increase of film thickness. In the case of same thickness, elastic modulus of the films obtained by ALD show 4. 2% ~23. 2% higher than those obtained by DCMS because of smaller grain size.
Surface Morphology Anisotropy and Stress Distribution Uniformity in Annealed Cu–W Films

Wang Y.,Li X.-H,Chen Y.-H,Xu K.-W,Fan D. W.

DOI: https://doi.org/10.1557/jmr.2005.0008

2005-01-01

Abstract:Copper-tungsten films were deposited on Si and Al2O3 substrates by magnetron sputtering and then in situ annealed in vacuum chamber at different temperatures. X-ray diffraction (XRD), scanning electron microscopy (SEM), and the polarization phase shift technique were used to characterize the microstructure, surface morphology, and residual stress of Cu–W films. The results indicated that there are two successive but distinctive stages of phase transition with the change of annealing temperatures. The evolution of surface morphology of Cu–W thin films shows a significant effect on the distribution of in-plane stresses. A strategy of integrating discrete wavelet transform and fractal geometry concepts was developed to analyze the anisotropy of surface structure of Cu–W thin films. The correlation between the anisotropy of surface morphology and the stress distribution of thin films was constructed. It is found that the stress distribution of the thin films is sensitive to the variations of the anisotropy of the surface structure with annealing temperature. The variation in the uniformity of in-plane stress distribution with the evolution of surface structure of thin films is independent of the choice of substrate materials.
Effects and Modulation Mechanism of Crystal Structure on Residual Stress of Cu Films Used for Metallization

Wenju Li,Shu Xiao,Xiaobo Zhang,Xinyu Meng,Yixiong Gao,Shuyu Fan,Tijun Li,Paul K. Chu

DOI: https://doi.org/10.1016/j.tsf.2024.140556

IF: 2.1

2024-01-01

Thin Solid Films

Abstract:Deformation cracking and delamination arising from residual stress are the main challenges for metallization in large-scale integrated circuits. Herein, an ultra-low residual stress Cu film is prepared on amorphous SiO2 by mixed power magnetron sputtering. Compared to conventional Cu films, the residual stress in the film decreases by 1434 times. The nano multi-layer structure produces lower stress and deformation as well as better reliability. The multi-layer Ti underlayer also reduces the residual stress and promotes the low-defect growth of Cu. The lower surface roughness, smaller dislocation density, predominant grain orientations of (111) and (001), and more substructures are beneficial to the reduction of residual stress. In addition, interlayer stress cancellation can be achieved by changing the number of (111) grains. The research on grain growth at the interface of nano multilayer films reveals an effective means to fabricate films with low residual stress for metallization in integrated circuits.
The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

Xinjian Wang,Xianping Dong,Chuanhai Jiang,Jiansheng Wu

DOI: https://doi.org/10.1016/j.surfcoat.2009.03.018

IF: 4.865

2009-01-01

Surface and Coatings Technology

Abstract:Cu and Cu(Cr) alloy films were sputtered on Si substrates covered with thermally grown SiO2. Atomic force microscopy, transmission electron microscopy, nano-indentation and four-point probe method were used to characterize the microstructure and properties of films, respectively. It was found that a small amount of Cr refined the Cu grains and decreased the surface roughness of films. After annealing at 450 °C, in contrast to the Cu films with large equiaxed grains, the Cu(Cr) alloy films exhibited a bimodal grain size distribution with fine columnar grains. In addition, high-density twins and preferably oriented columnar grains were found in the Cu(Cr) alloy films. As a result, the hardness and Young's modulus of Cu(Cr) films were much higher than those of Cu films. The final resistivity of the annealed Cu(Cr) alloy films was 2.55 μΩ cm which was close to that of the annealed Cu films.
Thickness Dependence of Internal Stress in DLC Films

GU Kun-ming,LV Le-yang,MAO Fei,YU Lie,TANG Jiao-ning

2011-01-01

Abstract:In this paper,serials of DLC films on single crystalline Si(111) substrates with different thickness were prepared by ECR microwave plasma enhanced chemical vapor deposition method in C2H2/H2/Ar2 plasma environment.The variation of thickness with deposition time and the thickness dependence of hardness,internal stress of films were investigated.It was showed that within selected time range,the thickness changes linear with deposition time and the deposition rate could be up to 80nm/min.The internal stress in as-deposited films increased firstly with thickness.Surface cracks for stress relaxation appear when the internal stress exceeds one critical value.The XRD results showed the shift of the substrate Si(111) peak increased firstly with film thickness,and then the change trend to stable,means the internal stress will keep in a certain level after the appearance of surface cracks.However,the hardness value was affected by the surface cracks of the films.
Effect of a Thin Cr Layer on the Microstructures and Fracture Behaviours of Copper Films

Haoliang Sun,Zhongxiao Song,Fei Ma,Kewei Xu

DOI: https://doi.org/10.4028/www.scientific.net/amr.194-196.2376

2011-01-01

Advanced Materials Research

Abstract:An investigation on Cu/Cr/Si composite thin films demonstrated that a thin Cr layer affects the microstructures and mechanical behavior of Cu films significantly. The fracture modes changes from brittle fracture to ductile rupture, as indicated by the dimpled rupture of Cu films. Moreover, the Cr sticking layer can result in carrot-shaped rods and a fine grain size. Further analysis indicates their deformation and fracture processes are closely related to the coupling of dislocation-mediated plasticity as well as the formation and growth of voids which act as sites for nucleation of the dimples.
Study of Local Stress Using Stress-Absorbing Si Diaphragm

DW Zheng,XH Wang,K Shyu,CT Chang,Y Guo,V Sarihan,WJ Wen,KN Tu

DOI: https://doi.org/10.1116/1.590888

1999-01-01

Abstract:A methodology was developed to study the residual stress distribution of thin-film patterns residing on a silicon wafer. The Si underlying the patterns studied was thinned down so that the deformation caused by residual stress in the microstructure could be detected by a Twyman–Green interferometer. A procedure called “numerical etching” was implemented to simulate the Si etching process, which linked the stress state of the microstructure on a regular wafer to that on a Si diaphragm. An initial stress field on the pattern was assumed, and its effect on the bending of the Si diaphragm beneath was calculated and compared to the measured value. The discrepancy between them was used to modify the initially assumed stress field and repeated until a satisfactory match was achieved. We believe that the approximated stress field sufficiently reflects the real stress distribution in the patterned structure under investigation. The stress distribution in an electroless Ni pad residing on Si for a flip-chip packaging application is used as an example.
Effect of Chromium Dopant on Microstructure and Resistivity Characteristics of Cu/Si(100) Systems

WANG Xin-jiang,LIU Jia-cong,HONG Bo,JIANG Chuan-hai,DONG Xian-ping

DOI: https://doi.org/10.3321/j.issn:1004-0609.2007.12.002

2007-01-01

The Chinese Journal of Nonferrous Metals

Abstract:Thin films of pure Cu and Cu with 1.19%Cr and 2.18%Cr were deposited by magnetron sputtering on Si(100) substrates.Samples were annealed at 300-500℃ in vacuum to investigate effects of Cr on the microstructure and resistivity characteristics of Cu/Si systems.X-ray diffraction reveals Cu(111) and Cu(200) peaks for Cu and Cu(Cr) films.However,Cu(Cr) films are textured in(111) orientation.Cr enhances the thermal stability of Cu/Si systems markedly.Resistivities of Cu(Cr) films after annealed at 400℃ and 500℃ are about 2.76μΩ·cm and 2.97μΩ·cm which approach to those of Cu films.The decrease of resistivity of annealed Cu(Cr) film can be attributed to the change of microstructure and microscopy of films and the diffusion of Cr.Once optimal amount of Cr and annealing procedures are determined,Cu(Cr) films can be applied as an electronic material resistant to high temperature.
Effect of Substrate Constraint on Stress-Induced Cracking of Sputtered Tungsten Thin Film

Sun Hao-Liang,Song Zhong-Xiao,Xu Ke-Wei

DOI: https://doi.org/10.7498/aps.57.5226

2008-01-01

Abstract:A comparative investigation was performed on the stress-induced surface cracking of tungsten films sputter deposited on polyimide (PI) and Si substrates. Microscopic observations suggest that with the same film thickness， two different types of cracking behaviors were observed. Wedge-shaped cracks are formed on the surface of film deposited on the Si substrate. However， the cracks of film deposited on the polyimide consist of aligned grains. The localized plastic deformation in the nanocrystalline W film on polyimide is mediated by the alignment of grains， which results from the grain rotation along the in-plane and out-of-plane directions. However， on the Si substrates the wedge-shaped cracks originate from the in-plane rotation of grains. The analysis implies that the different deformation behaviors are associated with the evolution of stress in the film and the substrate constraint.
Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

Yeting Xi,Kewei Gao,Xiaolu Pang,Huisheng Yang,Xiaotao Xiong,Hong Li,Alex A. Volinsky

DOI: https://doi.org/10.1016/j.ceramint.2017.06.050

IF: 5.532

2017-10-01

Ceramics International

Abstract:Residual stress in thin films and coatings strongly affects their properties and behavior in service. Comprehensive understanding and precise measurements of residual stress are prerequisites for preparing high quality films and coatings. Residual stresses in TiN films with different thickness were measured by X-ray diffraction (XRD) employing the cos2α sin2ψ method with certain optimization. Grazing incidence parallel beam optics was combined with side-inclination geometry using in-house designed sample stage to ensure results accuracy. To validate this method, TiN films with thickness ranging from 1 to 3µm were deposited on (100) Si single crystal substrates at 300°C by RF magnetron sputtering. High compressive −2GPa residual stress was present in the 0.9µm thick film and decreased with film thickness. Tensile stress of less than 0.3GPa was present in 2µm TiN film. Compressive-to-tensile residual stress transition was observed with the film thickness increase. Microstructure change with growth, annihilation of grain boudaries, atomic peening and recovery mechanisms are responsible for the reported stress sign transition.

materials science, ceramics
Simulation of annealing stress in Ag/Cu thin films

安兵,张同俊,袁超,崔昆

DOI: https://doi.org/10.3321/j.issn:1005-3093.2003.05.002

2003-01-01

Abstract:The stress-temperature curve of Ag/Cu thin films was studied by substrate curvature technique in a temperature range of room temperature to 500°C. The as-deposited film-stress is -250 MPa, while after annealing, the stress turns to a tensile stress, 370 MPa. A model based on deformation mechanism maps was used for simulating the stress-temperature curve. The results show that the main relaxation mechanisms, which include dislocation glide, power-law creep and diffusion creep, vary with the temperature and stress. However, the strain rates in thin films are smaller than those of bulk materials, making the strain more difficult under the same stress. During annealing, Ag takes the lead in the stress relaxation, and when all of its creep activation energies in films are enhanced up to 1.25-1.35 times of those of Ag bulk materials, the good agreement between simulated curves and measured is obtained.
The Effects of Passivation Layer and Film Thickness on the Mechanical Behavior of Freestanding Electroplated Cu Thin Films with Constant Microstructure

Xiang Yong,Vlassak Joost J.,Perez-Prado Maria T.,Tsui Ting Y.,McKerrow Andrew J.

DOI: https://doi.org/10.1557/proc-795-u11.37

2004-01-01

Abstract:The goal of this paper is to investigate the effects of film thickness and the presence of a passivation layer on the mechanical behavior of electroplated Cu thin films. In order to study the effect of passivating layers, freestanding Cu membranes were prepared using standard silicon micromachining techniques. Some of these Cu membranes were passivated by sputter depositing thin Ti films with thicknesses ranging from 20 nm to 50 nm on both sides of the membrane. The effect of film thickness was evaluated by preparing freestanding films with varying thickness but constant microstructure. To that effect, coatings of a given thickness were first vacuum annealed at elevated temperature to stabilize the microstructure. The annealed films were subsequently thinned to various thicknesses by means of chemical mechanical planarization (CMP) and freestanding membranes were prepared both with and without Ti passivation. The stress-strain curves of the freestanding Cu films were evaluated using the bulge test technique. The residual stress and elastic modulus of the film are not affected significantly by the passivation layer. The elastic modulus does not change with film thickness if the microstructure keeps constant. The yield stress increases if the film is passivated. For passivated films, yield stress is proportional to the inverse of the film thickness, which is consistent with the formation of a boundary layer of high dislocation density near the interfaces.
Analysis of Low Frequency SiN Film on the Effect of Stress Level and Deposition Parameters

HAN Xiaolin,LI Weizhi,YUAN Kai,JIANG Yadong

DOI: https://doi.org/10.3969/j.issn.1005-9490.2010.02.002

2010-01-01

Abstract:SiN thin films are deposited by plasma enhanced chemical vapor deposition(PECVD) under various power and pressure conditions.The connection of these two parameters with the related SiN film characteristics i.e.making relations of the film deposition rate with the stress and the thickness uniformity of this film,are discussed.Results show that the change of power affects ion bombardment on the substrate,and that of pressure lead to the change of the mean free path of the molecular.Ion bombardment and molecular mean free path will have a strong effect on film growth,thus,they will have an obvious effect on the characteristics of SiN film,such as deposition rate,stress and thickness uniformity.
Molecular Dynamics Simulation of Temperature Effects on Deposition of Cu Film on Si by Magnetron Sputtering

Guo Zhu,Jiangping Sun,Libin Zhang,Zhiyin Gan

DOI: https://doi.org/10.1016/j.jcrysgro.2018.04.002

IF: 1.8

2018-01-01

Journal of Crystal Growth

Abstract:The temperature effects on the growth of Cu thin film on Si (0 0 1) in the context of magnetron sputtering deposition were systematically studied using molecular dynamics (MD) method. To improve the comparability of simulation results at varying temperatures, the initial status data of incident Cu atoms used in all simulations were read from an identical file via LAMMPS-Python interface. In particular, crystalline microstructure, interface mixing and internal stress of Cu thin film deposited at different temperatures were investigated in detail. With raising the substrate temperature, the interspecies mixed volume and the proportion of face-centered cubic (fcc) structure in the deposited film both increased, while the internal compressive stress decreased. It was found that the fee structure in the deposited Cu thin films was < 111 > oriented, which was reasonably explained by surface energy minimization and the selectivity of bombardment energy to the crystalline planes. The quantified analysis of interface mixing revealed that the diffusion of Cu atoms dominated the interface mixing, and the injection of incident Cu atoms resulted in the densification of phase near the film-substrate interface. More important, the distribution of atomic stress indicated that the compressive stress was mainly originated from the filmsubstrate interface, which might be attributed to the densification of interfacial phase at the initial stage of film deposition. (C) 2018 Published by Elsevier B.V.
Studies on the Structure and Stress of B CN Thin Films

岳金顺,贺德衍,陈光华

DOI: https://doi.org/10.3321/j.issn:0455-2059.2001.01.006

2001-01-01

Abstract:BCN thin films were grow n by RF reactive sputtering. XRD andFTIR measurements suggested that there was a larger stress between the films and Si substrate. When the films were peeled off the substrate, stress relaxes and the IR absorption peaks shifted to lower w ave numbers. Also, it was found that substrates play an important role in the fo rmation of the stress, and the stress relaxation was dependent on the used subst rates: on Si substrate, the pattern of the stress relaxation looked like maple- leaves; on quartz substrate, it looked like periodically distributed broken line s.
Phase Structure and Residual Stress in Annealed Cu-W Films

Wang Yuan,Li Xiaohua,Song Zhongxiao,Xu Kewei,Wei Xiuying

DOI: https://doi.org/10.3321/j.issn:1002-185x.2007.03.016

2007-01-01

Rare Metal Materials and Engineering

Abstract:The phase transition of Copper-tungsten films deposited on Si (100) and Al2O3 substrates took place by means of in situ annealing in vacuum chamber at different temperatures. X-ray diffraction (XRD) and the polarization phase shift technique were employed to characterize the microstructure and residual stress of Cu-W films, respectively. The results indicated that the two successive but distinctive stages of phase transition appeared with the change of annealing temperatures, i.e., W (Cu) solution formation and two-phase crystalline (W and Cu) structure formation. The relationship between phase transition and residual stress was investigated, the tensile stress was caused during phase transition, whereas it was released with crystalline growth.
Real time stress monitoring in reflow solder: Cu thin films in Si(111)

Song Li,Bing An,Zhang Tong-jun,Wu Yi-ping,Wei Dai

DOI: https://doi.org/10.1109/ICEPT.2005.1564607

2005-01-01

Abstract:Substrate curvature method (SCM) is a versatile optical stress measuring method which owns a lot of merits: realtime, rapid, nondestructive, easily operating. A film stress measuring apparatus by SCM was developed, and stresses in Ag/Cu multilayer thin films and reflow solder on Cu thin films in Si(111) prepared by RF magnetron sputtering were detected. The stress-temperature behavior was studied. The stresses in Ag/Cu multilayer thin films were different due to different temperature. The stresses in reflow solder on Cu thin films in Si(111) were different due to the generation of excessive amounts of intermetallic compound. The results identify that the interfacial reaction kinetics has effect on wetting dynamics in evidence.

The Effects of Thickness on the Stress Properties of Sputtering Cu Films on Si Wafers

Effects Of Target-Substrate Distance On Structure And Residual Stress Of Cu/Si(100) Thin Films

Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Combined effects of residual stress and microstructure on degradation of Cu thin films on Si

Study on elastic modulus of ultra-thin copper films by in-situ SEM-SPM nanoindentation

Surface Morphology Anisotropy and Stress Distribution Uniformity in Annealed Cu–W Films

Effects and Modulation Mechanism of Crystal Structure on Residual Stress of Cu Films Used for Metallization

The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

Thickness Dependence of Internal Stress in DLC Films

Effect of a Thin Cr Layer on the Microstructures and Fracture Behaviours of Copper Films

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Effect of Chromium Dopant on Microstructure and Resistivity Characteristics of Cu/Si(100) Systems

Effect of Substrate Constraint on Stress-Induced Cracking of Sputtered Tungsten Thin Film

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

Simulation of annealing stress in Ag/Cu thin films

The Effects of Passivation Layer and Film Thickness on the Mechanical Behavior of Freestanding Electroplated Cu Thin Films with Constant Microstructure

Analysis of Low Frequency SiN Film on the Effect of Stress Level and Deposition Parameters

Molecular Dynamics Simulation of Temperature Effects on Deposition of Cu Film on Si by Magnetron Sputtering

Studies on the Structure and Stress of B CN Thin Films

Phase Structure and Residual Stress in Annealed Cu-W Films

Real time stress monitoring in reflow solder: Cu thin films in Si(111)