Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry

Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals

Investigation of Nitrogen Behaviors During Czochralski Silicon Crystal Growth

Nitrogen investigation by SIMS in two wide band-gap semiconductors: Diamond and Silicon Carbide

Origin,characteristics,and Suppression of Residual Nitrogen in MPCVD Diamond Growth Reactor

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Faster Growth of 6H-Sic Single Crystals by a Physical Vapor Transport Technique with Two Crucibles

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Issues related to the usage of nitrogen as carrier gas for the MOVPE growth of GaSb/InAs heterostructures on InAs pseudosubstrates

Crystal Growth and Oxygen Precipitation Behavior of 300 Mm Nitrogen-Doped Czochralski Silicon

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping