Abstract:We have fabricated La2O3 films on a Si substrate without a La‐Sr intermixing layer at the La2O3/Si interface using a pulsed‐laser deposition method. X‐ray diffraction data shows only two discernible peaks of the La2O3 films: hexagonal La2O3 (10‐1) and cubic La2O3 (222), indicating polycrystalline character. During film growth, the reflection high‐energy electron diffraction pattern from the La2O3 surface change from an initial column shape to a complicated distributed dot pattern with narrow lines, suggesting possible structural property changes in the La2O3 film. The occurrence of a structural transition is confirmed by high‐resolution transmission electron microscopy (HR‐TEM), which exhibited a clear crystalline phase change from an initial ∽10 nm thick amorphous La2O3 film to polycrystalline La2O3 on Si. Rutherford backscattering showed reduced La‐Si intermixing between La2O3 and Si. Furthermore, the results of X‐ray photoelectron spectroscopy atomic depth profile analysis showed that observation of La‐silicate over the whole La2O3 film indicating that Si difusses through whole thick La2O3 films forming Si‐doped La2O3 films. Our study of the well‐defined structural characteristics and sharp interface of La2O3/Si will enable further understanding of high dielectric constant materials grown on Si by introduction of advanced growth technique. This article is protected by copyright. All rights reserved.

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