The role of sulfur valency on thermoelectric properties of sulfur ion implanted copper iodide

Peter P. Murmu,John Kennedy,Zihang Liu,Takao Mori

DOI: https://doi.org/10.1016/j.jallcom.2022.166103

IF: 6.2

2022-07-07

Journal of Alloys and Compounds

Abstract:Copper iodide (CuI) is a promising semiconductor with many potential applications in the fields of opto-electronics, solar cells, photodetectors and thermoelectric for energy harvesting. 30 keV 32 S + ions were implanted with fluences between 5.0 × 10 14 and 1.1 × 10 16 ions cm −2 which results in 0.3–5.5 at% peak sulfur concentration at an average depth of ~ 30 nm. Sulfur implantation increased electrical conductivity by up to 100 % (42.3 Ω −1 cm −1 ) for film implanted with the highest fluence (1.1 × 10 16 ions cm −2 ), which was due to an increase in hole density of one order of magnitude. The thermoelectric power factor increased by over 300 % for low-fluence (≤1.0 × 10 15 ions cm −2 ) implanted CuI films which is attributed to a simultaneous 22 % increase in electrical conductivity (25.9 Ω −1 cm −1 ) and a 95 % increase in the Seebeck coefficient (498.6 μVK −1 ), which overcomes the typical trade-off. XPS results showed that doped sulfur ions are in S 2- states for low-concentration doped films, whereas for high-fluence (≥ 2.5 × 10 15 ions cm −2 ) implanted films, a fraction of the sulfur ions are also present in an elemental state. Sulfur solubility impacts its valency which alters the defect chemistry and thermoelectric properties of the sulfur implanted CuI films. Sulfur doping by ion implantation is a promising strategy to improve the electrical conductivity and power factor in wide bandgap thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering