Abstract:A radio-frequency micro-electro-mechanical system (RF MEMS) wafer-level packaging (WLP) method using pre-patterned benzo-cyclo-butene (BCB) polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to generate the housing cavity, the BCB sealing ring was protected by a sputtered Cr/Au (chromium/gold) layer. The average measured thickness of the BCB layer was 5.9 mu m. In contrast to the conventional methods of spin-coating BCB after fabricating cavities, the pre-patterned BCB method presented BCB bonding layers with better quality on severe topography surfaces in terms of increased uniformity of thickness and better surface flatness. The observation of the bonded layer showed that no void or gap formed on the protruding coplanar waveguide (CPW) lines. A shear strength test was experimentally implemented as a function of the BCB widths in the range of 100-400 mu m. The average shear strength of the packaged device was higher than 21.58 MPa. A RF MEMS switch was successfully packaged using this process with a negligible impact on the microwave characteristics and a significant improvement in the lifetime from below 10 million to over 1 billion. The measured insertion loss of the packaged RF MEMS switch was 0.779 dB and the insertion loss deterioration caused by the package structure was less than 0.2 dB at 30 GHz.

Development of a Reliable High-Performance WLP for a SAW Device

Patterned Microstructure Array Fabrication By Using A Novel Standing Surface Acoustic Wave Device

Wafer-Level Packaging Method For Rf Mems Applications Using Pre-Patterned Bcb Polymer

Improvement of Thermo-Mechanical Reliability of Wafer-Level Chip Scale Packaging

Development of Packaged

Reliability of RDL Structured Wafer Level Packages

Structure With Thin Siox/Sinx Bilayer And Al Electrodes For High-Frequency, Large-Coupling, And Low-Cost Surface Acoustic Wave Devices

High-Performance Surface Acoustic Wave Devices Using LiNbO3/SiO2/SiC Multilayered Substrates

High-Performance Surface Acoustic Wave Devices Using LiNbO 3 /SiO 2 /SiC Multilayered Substrates

The Redistribution Layer-First Embedded Fan-Out Wafer Level Packaging for 2-D Ultrasonic Transducer Arrays

Design and Development of Encapsulation Process for CIS-TSV Wafer Level Package

Study on Board Level Drop Reliability of Wafer Level Package

A Low-Loss Wideband SAW Filter with Low Drift Using Multilayered Structure

Reliability Of Fine Pitch Wafer Level Packages

Improvement of Manufacturing Process for Multilayer Substrate Integrated Waveguide Cavity

Fabrication and High-Frequency Characterization of Low-Cost Fan-In/out WLP Technology with RDL for 2.5D/3D Heterogeneous Integration

Ultra-Wideband Surface Acoustic Wave Filters Based on the Cu/LiNbO 3 /sio 2 /sic Structure

Fabrication of Si / Inlaid-IDT / LiNbO 3 Structure for Acoustic Boundary Wave Devices

A Novel Wafer Level Package Strategy For Rf Mems

Encapsulation of Film Bulk Acoustic Resonator Filters Using A Wafer-Level Microcap Array

Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure