Abstract:With the size of transistors scaling down, 3D IC packaging emerged as one of the most promising solutions to achieve system integration on the track of Moore's Law. In this article, we demonstrated a sub-system with one 28nm logic device and two 40nm chips on a 600mm2 silicon interposer with Through-Silicon-Via (TSV) integrating 4 layers of high density interconnects. The packages were assembled using our proprietary CoWoS (Chip on Wafer on Substrate) technology that incorporated 270,000 micro-bump (μBump) and 8,700 C4 bumps. Comprehensive reliability characterization and test methods will be presented. It includes copper interconnect reliability of silicon interposer on EM, SM and IMD TDDB with the presence of TSV. μBump EM and TSV EM are characterized to provide a design guideline for maximum current carrying capability; the EM test methodology was also used to optimize the integrated process, e.g. TSV copper plating, μBump joint, and interface treatment of TSV revealing. Package process optimization, bill of material selectio n and qualificatio n we r e conducted on a 28nm Cu/ELK (Extreme low-K) test vehicle taking Chip-Package-Interaction into consideration. Not only component level package reliability tests were performed, board level Thermal Cycling, Power Cycling and Mechanical Shock tests were also executed to understand the reliability margin and potential failure modes in field use condition. The typical failure modes and mechanisms will be discussed. CoWoS technology is eventually successfully developed with enhanced reliability. The results highlight the importance of a highly integrated 3D IC technology from silicon wafer process to assembly packaging. This work shows that in the new paradigm of 3D IC integration, Si Foundry is positioned at a unique leadership to manage the innovation in Si processes and the improvement of Si assembly operating life.

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Study on Board Level Drop Reliability of Wafer Level Package

Reliability of RDL Structured Wafer Level Packages

Dynamic Substructure Method for Prediction of Solder Joint Reliability of IC Package under Drop Test

Research of Temperature Cycling Reliability of Wafer Level Packages with Redistribution Layer

Improvement of Thermo-Mechanical Reliability of Wafer-Level Chip Scale Packaging

Parameters study of thermomechanical reliability of board-level fan-out package

Wafer Level Reliability Evaluation of Gate Oxide for Advanced CMOS Process

Study on Board Level Drop Reliability of Wafer Level Packaging with Redistribution Structure

Reliability Assessment of Wafer Level Packages with Novel Feni under Bump Metallization

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Comparative study on the reliability of QFN and AAQFN packages

Drop performance evaluation for application of different underfill processes

Analysis of warpage and reliability of very thin profile fine pitch ball grid array

Reliability characterization of Chip-on-Wafer-on-Substrate (CoWoS) 3D IC integration technology

Reliability Evaluation of Board-Level Flip-Chip Package under Coupled Mechanical Compression and Thermal Cycling Test Conditions

Reliability of Lead-Free Solder Interconnections in Thermal and Power Cycling Tests

Thermal Cycling Test and Simulation of Fan-Out Chip-Last Panel-Level Packaging for Heterogeneous Integration

Board Level Wlcsp 3d Thermal Stress Analysis By Submodeling Of Fea

Development of two different molding methods in 2.5D package with 20 μm or less fine bump pitch CoW structure

Solder Joint in Electronic Packages and Its Reliability