High‐Pressure Synthesis of Amorphous Si3N4 and SiBN‐based Monoliths Without Sintering Additives

Wei Li,Shuailing Ma,Siwen Cui,Jingxue Ding,Marc Widenmeyer,Xiaoqi Zhang,Ying Zhan,Zhaoju Yu,Jiarong Cheng,Pinwen Zhu,Tian Cui,Anke Weidenkaff,Ralf Riedel
DOI: https://doi.org/10.1002/adem.202400677
IF: 3.6
2024-06-01
Advanced Engineering Materials
Abstract:Amorphous Si3N4 and SiBN monoliths without sintering additives were successfully prepared by high‐pressure‐low‐temperature (HPLT) sintering using the single‐source‐precursor derived amorphous Si3N4 and SiBN powders as raw materials. The microstructural evolution and crystallization behavior of the as‐prepared samples were investigated using scanning electron and transmission electron microscopy and X‐ray powder diffraction, respectively. The results showed that the incorporation of boron in the Si–N network enhanced the crystallization temperature up to 1200 °C. The Vickers' hardness of the HPLT‐sintered Si3N4 sample amounts ∽ 11.6 GPa whether prepared at 1000 °C or 1200 °C, while the maximum hardness of the SiBN sample is up to 16.3 GPa. The fracture toughness of amorphous Si3N4 and SiBN5 samples are almost identical (around 2.5 MPa·m1/2) whether prepared at 1000 oC or 1200 oC, and SiBN2 and SiBN5 samples show an improved fracture toughness. In addition, the oxidation resistance of the as‐prepared samples was investigated at temperatures up to 1000 oC. A comparison between amorphous Si3N4 and SiBN monoliths demonstrated a positive effect of the presence of boron on their oxidation resistance. This article is protected by copyright. All rights reserved.
materials science, multidisciplinary
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