Abstract:The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic Germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with $E\lesssim 0.5$~kV/cm, our calculations has reasonable agreement with the recent transport experiment in the spin-injection configuration [Phys. Rev. Lett. {\bf 111}, 257204 (2013)]. We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field $E\lesssim 50$~V/cm, which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation [Phys. Rev. B {\bf 86}, 085202 (2012)], which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with $0.5\lesssim E \lesssim 2$~kV/cm, the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when $1.4 \lesssim E\lesssim 2$~kV/cm which lies in the strong-electric-field regime, a small fraction of electrons ($\lesssim 5\%$) can be driven from the L to $\Gamma$ valley, and the spin relaxation rates are the same for the $\Gamma$ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the $\Gamma$ valley to the whole system, the spin dynamics in the L valley can be measured from the $\Gamma$ valley by the standard direct optical transition method.

Valley-dependent spin polarization and long-lived electron spins in germanium

Spin-dependent Intravalley and Intervalley Electron-Phonon Scatterings in Germanium

Optically reconfigurable polarized emission in Germanium

Electrical spin injection and transport in germanium

Valley-Spin Polarization in the Magneto-Optical Response of Silicene and Other Similar 2D Crystals

Giant Spin Lifetime Anisotropy and Spin-Valley Locking in Silicene and Germanene from First-Principles Density-Matrix Dynamics

Ferroelectric control of the spin texture in germanium telluride

Spin-dependent optical properties in strained silicon and germanium

Nonlinear Hall effect from long-lived valley-polarizing relaxons

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Ultrafast Manipulation of Valley Pseudospin

Tunable polarization properties of charge, spin, and valley in Janus VSiGeZ4 (Z= N, P, As) monolayers

Multi-valley Spin Relaxation in the Presence of High In-Plane Electric Fields in N-Type GaAs Quantum Wells

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium

Position-dependence of valley polarization and valley coherence of WS2 monolayer flakes

Valley polarization generated in 3-dimensional group-IV monochalcogenids

Valley coherent exciton-polaritons in a monolayer semiconductor

Opto-valleytronic imaging of atomically thin semiconductors